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PDF IXTP220N04T2 Data sheet ( Hoja de datos )
| Número de pieza | IXTP220N04T2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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TrenchT2TM
Power MOSFET
IXTA220N04T2
IXTP220N04T2
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
40V
220A
3.5mΩ
TO-263
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque ( TO-220 )
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
40
40
V
V
± 20 V
220 A
120 A
660 A
110 A
600 mJ
360 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
2.5 g
3.0 g
Characteristic Values
Min. Typ. Max.
40 V
2.0 4.0 V
±200 nA
5 μA
50 μA
2.8 3.5 mΩ
G
S
TO-220
(TAB)
G DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
• Synchronous Buck Converters
• High Current Switching Power
Supplies
• Battery Powered Electric Motors
• Resonant-Mode Power Supplies
• Electronics Ballast Application
• Class D Audio Amplifiers
© 2008 IXYS CORPORATION, All rights reserved
DS99918C(11/08)
1 page  
28
27
26
25
24
23
22
21
20
19
18
17
16
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 3.3Ω
VGS = 10V
VDS = 20V
I D = 110A
I D = 220A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
130
120
110
100
90
80
70
60
50
40
30
20
10
0
2
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 20V
I D = 220A, 110A
4 6 8 10 12 14 16 18
RG - Ohms
70
65
60
55
50
45
40
35
30
25
20
15
10
5
20
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
42 50
38
tf
td(off) - - - -
46
RG = 3.3Ω, VGS = 10V
34
VDS = 20V
42
30 38
TJ = 125ºC
26 34
22 30
18 26
TJ = 25ºC
14 22
40 60 80 100 120 140 160 180 200
ID - Amperes
IXTA220N04T2
IXTP220N04T2
28
27
26
25
24
23
22
21
20
19
18
40
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
TJ = 125ºC
RG = 3.3Ω
VGS = 10V
VDS = 20V
TJ = 25ºC
60 80 100 120 140 160 180 200
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
36
34
32
30
28
26
24
22
20
18
16
14
12
25
t f td(off) - - - -
RG = 3.3Ω, VGS = 10V
VDS = 20V
I D = 220A
35 45 55 65 75 85 95
TJ - Degrees Centigrade
42
40
38
36
34
32
30
I D = 110A
28
26
24
22
20
18
105 115 125
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
200
180 t f
td(off) - - - -
160 TJ = 125ºC, VGS = 10V
VDS = 20V
140
120
100
80 I D = 110A
60
40
20 I D = 220A
0
2 4 6 8 10 12 14 16 18
RG - Ohms
200
180
160
140
120
100
80
60
40
20
0
20
© 2008 IXYS CORPORATION, All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTP220N04T2.PDF ] | |
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