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PDF IXTP200N085T Data sheet ( Hoja de datos )
| Número de pieza | IXTP200N085T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA 200N085T
IXTP 200N085T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
85
200
5.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Maximum Ratings
85 V
85 V
± 20
200
75
540
25
1.0
V
A
A
A
A
J
3 V/ns
480 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
4.2 5.0 m Ω
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99643 (11/06)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
100
RG = 5Ω
90 VGS = 10V
VDS = 43V
80
70
60
50 I D = 50A
40 I D = 25A
30
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
180
t r td(on) - - - -
160 TJ = 125ºC, VGS = 10V
140 VDS = 43V
65
60
55
120
100 I D = 50A
80
I D = 25A
50
45
40
60 35
40 30
20 25
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
72 105
70
TJ = 25ºC
100
68 95
66
64
62 t f
td(off) - - - -
RG = 5Ω, VGS = 10V
60 VDS = 43V
58
TJ = 125ºC
90
85
80
75
70
56 TJ =125ºC 65
54 60
52 TJ = 25ºC 55
50 50
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA200N085T
IXTP200N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
100
90
80
RG = 5Ω
70 VGS = 10V
VDS = 43V
60
TJ = 25ºC
50
40
30
25
TJ = 125ºC
30 35 40
ID - Amperes
45
50
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
70 97
68 94
66
I D = 25A
91
64 88
62 t f
td(off) - - - -
60 RG = 5Ω, VGS = 10V
VDS = 43V
58
85
82
79
56 76
I D = 50A
54 73
52 70
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
200
t f td(off) - - - -
180 TJ = 125ºC, VGS = 10V
160 VDS = 43V
320
290
260
140 230
120
I D = 50A
I D = 25A
200
100 170
80 140
60 110
40 80
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_200N085T (61) 11-20-06-A.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTP200N085T.PDF ] | |
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