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IXTA200N055T2-7 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTA200N055T2-7
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTA200N055T2-7 Datasheet, IXTA200N055T2-7 PDF,ピン配置, 機能
TrenchT2TM
Power MOSFET
Preliminary Technical Information
IXTA200N055T2-7
VDSS =
ID25 =
RDS(on)
55V
200A
4.2mΩ
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
55
55
V
V
± 20 V
200 A
160 A
500 A
100 A
600 mJ
360 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
3g
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
±200 nA
5 μA
50 μA
3.3 4.2 mΩ
TO-263 (7-lead)
1
7
Pins: 1 - Gate
2, 3 - Source
5,6,7 - Source
TAB (8) - Drain
(TAB)
Features
z International standard package
z 175°C Operating Temperature
z High current handling capability
z Avalanche rated
z Low RDS(on)
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z Automotive
- Motor Drives
- 12V Battery
- ABS Systems
z DC/DC Converters and Off-line UPS
z Primary- Side Switch
z High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS100081(11/08)

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Power MOSFET

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