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PDF IXTP24P085T Data sheet ( Hoja de datos )
| Número de pieza | IXTP24P085T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA24P085T
IXTP24P085T
VDSS =
ID25 =
≤RDS(on)
- 85V
- 24A
65mΩ
TO-263 AA (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-220
TO-263
Maximum Ratings
- 85
- 85
V
V
±15 V
±25 V
- 24 A
- 80 A
- 24 A
200 mJ
83 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
3.0 g
2.5 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 85 V
- 2.5
- 4.5 V
±50 nA
- 3 μA
-100 μA
65 mΩ
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS99969B(01/13)
1 page  
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
30
29 RG = 10Ω, VGS = -10V
VDS = - 43V
28
27
I D = -12A
26
25
24
I D = - 24A
23
22
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
120
t r td(on) - - - -
100 TJ = 125ºC, VGS = -10V
VDS = - 43V
80
I D = - 24A, -12A
60
26
24
22
20
40 18
20 16
0 14
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
30 58
29
t f td(off) - - - -
54
RG = 10Ω, VGS = - 10V
28
VDS = - 43V
50
27 46
26 42
25 38
24
TJ = 125ºC, 25ºC
34
23 30
22 26
-12 -13 -14 -15 -16 -17 -18 -19 -20 -21 -22 -23 -24
ID - Amperes
IXTA24P085T
IXTP24P085T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
29
28 TJ = 125ºC
27
26
TJ = 25ºC
25
RG = 10Ω, VGS = -10V
VDS = - 43V
24
23
-12 -13 -14 -15 -16 -17 -18 -19 -20 -21 -22 -23 -24
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
29 58
28
t f td(off) - - - -
54
RG = 10Ω, VGS = -10V
27
VDS = - 43V
50
26 46
I D = -12A
25 42
24
I D = - 24A
38
23 34
22 30
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
100
110
90 t f
td(off) - - - -
80 TJ = 125ºC, VGS = -10V
VDS = - 43V
70
100
90
80
60
50 I D = -12A, - 24A
70
60
40 50
30 40
20 30
10 20
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTP24P085T.PDF ] | |
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