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IXTA24P085T PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTA24P085T
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTA24P085T Datasheet, IXTA24P085T PDF,ピン配置, 機能
TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA24P085T
IXTP24P085T
VDSS =
ID25 =
RDS(on)
- 85V
- 24A
65mΩ
TO-263 AA (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-220
TO-263
Maximum Ratings
- 85
- 85
V
V
±15 V
±25 V
- 24 A
- 80 A
- 24 A
200 mJ
83 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
3.0 g
2.5 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 85 V
- 2.5
- 4.5 V
±50 nA
- 3 μA
-100 μA
65 mΩ
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS99969B(01/13)

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