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Si3865BDV の電気的特性と機能

Si3865BDVのメーカーはVishay Siliconixです、この部品の機能は「Load Switch with Level-Shift」です。


製品の詳細 ( Datasheet PDF )

部品番号 Si3865BDV
部品説明 Load Switch with Level-Shift
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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Si3865BDV Datasheet, Si3865BDV PDF,ピン配置, 機能
Load Switch with Level-Shift
Si3865BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS2 (V)
RDS(on) ()
1.8 to 8
0.060 at VIN = 4.5 V
0.100 at VIN = 2.5 V
0.175 at VIN = 1.8 V
ID (A)
2.9
2.2
1.7
DESCRIPTION
The Si3865BDV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET® is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si3865BDV operates on
supply lines from 1.8 V to 8 V, and can drive loads up to 2.9 A.
APPLICATION CIRCUITS
Si3865BDV
VIN
R1
4
Q2
6
2, 3
C1
6
VOUT
ON/OFF
Ci
R2
5
Q1
1
R2
Co
LOAD
GND
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• 60 mLow RDS(on) TrenchFET®: 1.8 V Rated
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Low Profile, Small Footprint TSOP-6 Package
• 3000 V ESD Protection On Input Switch, VON/OFF
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
40
32
td(off)
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tf
24
16
tr
8
td(on)
0
02468
R2 (k)
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
Switching Variation
R2 at VIN = 2.5 V, R1 = 20 k
COMPONENTS
R1 Pull-Up Resistor
Typical 10 kto 1 M*
R2 Optional Slew-Rate Control
Typical 0 to 100 k*
C1 Optional Slew-Rate Control
Typical 1000 pF
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
The Si3865BDV is ideally suited for high-side load switching
in portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Document Number: 72848
S10-2142-Rev. D, 20-Sep-10
www.vishay.com
1

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Si3865BDV pdf, ピン配列
Si3865BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6 0.40
VGS = 5 V thru 2 V
5
0.32
VON/OFF = 1.5 V to 8 V
4
3
2 1.5 V
0.24
TJ = 125 °C
0.16
0.08
1
TJ = 25 °C
0
01234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.6
VON/OFF = 1.5 V to 8 V
0.5
0.4
TJ = 125 °C
0.3
TJ = 25 °C
0.2
0.1
5
0.00
0
1.0
12345
IL - (A)
VDROP vs. IL at VIN = 4.5 V
VON/OFF = 1.5 V to 8 V
0.8
6
0.6
TJ = 125 °C
TJ = 25 °C
0.4
0.2
0.0
0
1.0
0.8
12345
IL - (A)
VDROP vs. IL at VIN = 2.5 V
6
IL = 1 A
VON/OFF = 1.5 V to 8 V
0.6
0.4
TJ = 125 °C
0.2
TJ = 25 °C
0.0
012345678
VIN (V)
VDROP vs. VIN at IL = 1 A
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IL - (A)
VDROP vs. IL at VIN = 1.8 V
1.4
IL = 1 A
1.3 VON/OFF = 1.5 V to 8 V
1.2
VIN = 5 V
1.1
VIN = 1.8 V
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
Normalized On-Resistance
vs. Junction Temperature
Document Number: 72848
S10-2142-Rev. D, 20-Sep-10
www.vishay.com
3


3Pages


Si3865BDV 電子部品, 半導体
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
Package Information
Vishay Siliconix
e1 e1
54
E1 E
1
23
-B-
654
E1 E
1
23
-B-
eb
5-LEAD TSOP
D
0.08 C
0.15 M C B A
-A-
A2 A
eb
6-LEAD TSOP
4x 1
R
R
- C - A1
Seating Plane
4x 1
(L1)
0.15 M C B A
0.17 Ref
c
L2
Gauge Plane
Seating Plane
L
Document Number: 71200
18-Dec-06
MILLIMETERS
Dim Min Nom Max
A 0.91 - 1.10
A1 0.01 - 0.10
A2 0.90 - 1.00
b 0.30 0.32 0.45
c 0.10 0.15 0.20
D 2.95 3.05 3.10
E 2.70 2.85 2.98
E1 1.55 1.65 1.70
e 0.95 BSC
e1 1.80 1.90 2.00
L 0.32 - 0.50
L1 0.60 Ref
L2 0.25 BSC
R 0.10
-
-
048
1 7 Nom
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
INCHES
Min Nom Max
0.036 - 0.043
0.0004
-
0.004
0.035 0.038 0.039
0.012 0.013 0.018
0.004 0.006 0.008
0.116 0.120 0.122
0.106 0.112 0.117
0.061 0.065 0.067
0.0374 BSC
0.071 0.075 0.079
0.012 - 0.020
0.024 Ref
0.010 BSC
0.004
-
-
048
7 Nom
www.vishay.com
1

6 Page



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部品番号部品説明メーカ
Si3865BDV

Load Switch with Level-Shift

Vishay Siliconix
Vishay Siliconix


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