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IRF3709ZSのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF3709ZS |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF3709ZSダウンロード(pdfファイル)リンクがあります。 Total 12 pages
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95835
IRF3709Z
IRF3709ZS
IRF3709ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V 6.3m: 17nC
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3709Z
D2Pak
IRF3709ZS
TO-262
IRF3709ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
gRθJA Junction-to-Ambient (PCB Mount)
Max.
30
± 20
87h
62h
350
79
40
0.53
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
–––
Max.
1.89
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through are on page 12
www.irf.com
1
1/16/04
1 Page IRF3709Z/S/L
1000
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
10
0.1
3.0V
≤60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
10
3.0V
1
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
1 TJ = 25°C
VDS = 15V
≤60µs PULSE WIDTH
0.1
012345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 42A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
3Pages IRF3709Z/S/L
9.00
Vgs = 10V
8.00
TJ = 125°C
7.00
6.00
TJ = 25°C
5.00
4.00
10.0
20.0 30.0 40.0 50.0
ID, Drain Current (A)
60.0
70.0
Fig 12. On-Resistance vs. Drain Current
16
ID = 21A
14
12
10
TJ = 125°C
8
6
4 TJ = 25°C
2
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Vds
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Id
Vgs
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
V(BR)DSS
tp
IAS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
250
ID
TOP 5.4A
200 8.0A
BOTTOM 17A
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Drain Current
www.irf.com
6 Page | |||
ページ | 合計 : 12 ページ | ||
|
PDF ダウンロード | [ IRF3709ZS データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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