DataSheet.jp

IRF3709ZS の電気的特性と機能

IRF3709ZSのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF3709ZS
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRF3709ZSダウンロード(pdfファイル)リンクがあります。

Total 12 pages

No Preview Available !

IRF3709ZS Datasheet, IRF3709ZS PDF,ピン配置, 機能
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95835
IRF3709Z
IRF3709ZS
IRF3709ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V 6.3m: 17nC
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3709Z
D2Pak
IRF3709ZS
TO-262
IRF3709ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
gRθJA Junction-to-Ambient (PCB Mount)
Max.
30
± 20
87h
62h
350
79
40
0.53
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
–––
Max.
1.89
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through ‡ are on page 12
www.irf.com
1
1/16/04

1 Page





IRF3709ZS pdf, ピン配列
IRF3709Z/S/L
1000
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
10
0.1
3.0V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
10
3.0V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
1 TJ = 25°C
VDS = 15V
60µs PULSE WIDTH
0.1
012345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 42A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRF3709ZS 電子部品, 半導体
IRF3709Z/S/L
9.00
Vgs = 10V
8.00
TJ = 125°C
7.00
6.00
TJ = 25°C
5.00
4.00
10.0
20.0 30.0 40.0 50.0
ID, Drain Current (A)
60.0
70.0
Fig 12. On-Resistance vs. Drain Current
16
ID = 21A
14
12
10
TJ = 125°C
8
6
4 TJ = 25°C
2
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Vds
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Id
Vgs
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
V(BR)DSS
tp
IAS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
15V
DRIVER
+
-
VDD
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
250
ID
TOP 5.4A
200 8.0A
BOTTOM 17A
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Drain Current
www.irf.com

6 Page



ページ 合計 : 12 ページ
 
PDF
ダウンロード
[ IRF3709ZS データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF3709Z

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF3709ZCL

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF3709ZCLPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF3709ZCS

HEXFET Power MOSFET

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap