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MDF4N60 の電気的特性と機能

MDF4N60のメーカーはMagnaChipです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 MDF4N60
部品説明 N-Channel MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 




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MDF4N60 Datasheet, MDF4N60 PDF,ピン配置, 機能
MDP4N60/MDF4N60
N-Channel MOSFET 600V, 4.6A, 2.0
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 4.6A
RDS(ON) 2.0Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
G
S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP4N60
MDF4N60
600
±30
4.6 4.6*
2.9 2.9*
18.4 18.4*
92.5 34.7
0.74 0.28
9.25
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
May. 2011 Version 1.5
Symbol
RθJA
RθJC
MDP4N60
62.5
1.35
MDF4N60
62.5
3.6
Unit
oC/W
1 MagnaChip Semiconductor Ltd.

1 Page





MDF4N60 pdf, ピン配列
8
Vgs=5.5V
7 =6.0V
=6.5V
=7.0V
6 =8.0V
=10.0V
=15.0V
5
4
Notes
1. 250Pulse Test
2. TC=25
3
2
1
5 10 15
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
20
3.0
Notes :
1. V = 10 V
2.5
GS
2. I = 2.3A
D
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
T , Junction Temperature [oC]
J
Fig.3 On-Resistance Variation with
Temperature
200
3.5
3.0
2.5
VGS=10.0V
2.0
V =20V
GS
1.5
1.0
0.5
02468
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
10
1.2
Notes :
1. VGS = 0 V
2. I = 250
D
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
150-55
1
25
0.1
2468
VGS [V]
Fig.5 Transfer Characteristics
May. 2011 Version 1.5
10
3
Notes :
1. V = 0 V
GS
10 2.250s Pulse test
150
1
25
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.


3Pages


MDF4N60 電子部品, 半導体
Physical Dimensions
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
May. 2011 Version 1.5
6 MagnaChip Semiconductor Ltd.

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

Link :


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