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60N3LH5のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | 60N3LH5 |
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部品説明 | N-channel Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューと60N3LH5ダウンロード(pdfファイル)リンクがあります。 Total 16 pages
STD60N3LH5
STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220
STripFET™ V Power MOSFET
Features
Type
STD60N3LH5
STP60N3LH5
STU60N3LH5
VDSS
30 V
30 V
30 V
RDS(on) max
0.008 Ω
0.0084 Ω
0.0084 Ω
ID
48 A
48 A
48 A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD60N3LH5
STP60N3LH5
STU60N3LH5
Marking
60N3LH5
60N3LH5
60N3LH5
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
April 2009
Doc ID 14079 Rev 3
1/16
www.st.com
16
1 Page STD60N3LH5, STP60N3LH5, STU60N3LH5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VDS Drain-source voltage (VGS = 0) @ TJMAX
VGS
ID (1)
Gate-Source voltage
Drain current (continuous) at TC = 25 °C
ID
IDM (2)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25 °C, Id = 24 A, Vdd = 12 V
Value
30
35
± 22
48
42.8
192
60
0.4
160
-55 to 175
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
Tj
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
Value
2.5
100
275
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
Unit
°C/W
°C/W
°C
Doc ID 14079 Rev 3
3/16
3Pages Electrical characteristics
STD60N3LH5, STP60N3LH5, STU60N3LH5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
Figure 4. Output characteristics
Figure 5. Transfer characteristics
ID AM03360v1
(A)
70
60
50
40
30
20
10
0
0 1 2 3 VGS(V)
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
6/16 Doc ID 14079 Rev 3
6 Page | |||
ページ | 合計 : 16 ページ | ||
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PDF ダウンロード | [ 60N3LH5 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
60N3LH5 | N-channel Power MOSFET | STMicroelectronics |