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Número de pieza | ST25N10 | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | STANSON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ST25N10 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! ST25N10
N Channel Enhancement Mode MOSFET
25.0A
DESCRIPTION
ST25N10 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The ST16N10 has
been designed specially to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM controllers. It has been optimized
for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
FEATURE
100V/12.0A, RDS(ON) = 40mΩ
@VGS = 10V
100V/10.0A, RDS(ON) = 45mΩ
@VGS =4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252 package design
PART MARKING
Y: Year Code A: Week Code
P: Process Code X: Produces Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST25N10 2013. V1
1 page ST25N10
N Channel Enhancement Mode MOSFET
25.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST25N10 2013. V1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet ST25N10.PDF ] |
Número de pieza | Descripción | Fabricantes |
ST25N10 | N-Channel Enhancement Mode MOSFET | STANSON |
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