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Datasheet 1N6523 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6523 | 0.1A - 0.5A RECTIFIERS 1N6521, 1N6523, 1N6525, 1N6527
High-reliability discrete products and engineering services since 1977
0.1A - 0.5A RECTIFIERS
FEATURES Available as High Reliability, JANTX level by adding “-HR” suffix. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” su |  Digitron Semiconductors | rectifier |
| 2 | 1N6523 | 2/000 V - 10/000 V Rectifiers 2,000 V - 10,000 V Rectifiers
0.10 A - 0.5 A Forward Current 70 ns Recovery Time
AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/576
1N6521 1N6523 1N6525 1N6527
4
JANTX
Part Number
JANTXV
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
Working Reverse Voltage (Vrwm) Average Rectified Current (Io) |  ETC | rectifier |
| 3 | 1N6523 | Spice Model
Spice Model
1N6523
Electrical Characteristics and Maximum Ratings
Part Working Number Reverse Voltage (Vrwm) Average Rectified Current (Io) Reverse Current @ Vrwm (Ir) Forward Voltage 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms (3) (Ifsm) (Ifr |  VMI | diode |
| 4 | 1N6523 | Diode Switching 3KV 0.25A 2-Pin |  New Jersey Semiconductor | diode |
| 5 | 1N6523U | 2/000 V - 5/000 V Rectifiers 2,000 V - 5,000 V Rectifiers
0.15 A - 0.50 A Forward Current 70 ns Recovery Time
SURFACE MOUNT HERMETICALLY SEALED
1N6521U 1N6523U 1N6525U
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
Part Number Working Reverse Voltage (Vrwm) 55°C(1) Volts 1N6521U 1N6523U 1N6525U Amps Average Rectified Current | ETC | rectifier |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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