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Datasheet 1N6285CA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6285CA | Diode, Rectifier, TVS Type 1.5KE SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 440 Volts 1500 Watt Peak Power 5.0 Watt Steady State
FEATURES l l l l l l l l Plastic package has Underwriters Laboratory Flammability Classification 94V-O Glass passivated chip junction in Molded Plastic package 15 |  TRSYS | tvs-diode |
| 2 | 1N6285CA | TRANSIENT VOLTAGE SUPPRESSOR 1N6267A-1N6303CA
VBR : 6.8 - 200 Volts PPK : 1500 Watts
FEATURES :
* 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to V BR(min.) * Typical IR less then 1µA above 10V
TRANSIENT VOLTAGE SUPPRESSOR
DO- |  SynSemi | tvs-diode |
| 3 | 1N6285CA | BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR 1N6267C - 1N6303CA
VBR : 6.8 - 200 Volts PPK : 1500 Watts
FEATURES :
* 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V * Pb / RoHS Free
BIDIRECTIONAL |  EIC | tvs-diode |
| 4 | 1N6285CA | Diode TVS Single Bi-Dir 33.3V 1.5KW 2-Pin Case 1 |  New Jersey Semiconductor | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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