|
|
Datasheet 1N58 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N58 | Diode, Rectifier |  American Microsemiconductor | diode |
| 2 | 1N58 | GOLD BONDED GERMANIUM DIODES |  New Jersey Semiconductor | diode |
| 3 | 1N5802 | VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS 1N5802, 1N5804, 1N5806
Available on commercial
versions
VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a f |  Microsemi | rectifier |
| 4 | 1N5802 | RECTIFIER DIODE RECTIFIER, up to 150V, 2.5A, 25ns
1N5802 1N5804 1N5806
TEL:805-498-2111 FAX:805-498- 3804 WEB:http://www.semtech.com
MECHANICAL
G111
Dimensions
DIM N
A B C D E
Millimeters MIN MAX 1.65 2.16 17.8 33.0 3.18 6.35 - 0.80 0.69 0.81
Inches
MIN MAX
0.065
0.085
0.70 1.30
0.125
0.250
- 0.030
|  Semtech | rectifier |
| 5 | 1N5802 | GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS Certificate TH97/10561QM
Certificate TW00/17276EM
1N5802 - 1N5806
PRV : 50 - 150 Volts Io : 2.5 Amperes
GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS
DO - 41
FEATURES :
* Glass passivated chip * High current capability * High surge current capability * High reliability * Low reverse current * |  EIC | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
| Esta página es del resultado de búsqueda del 1N58. Si pulsa el resultado de búsqueda de 1N58 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |