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Datasheet 1N540 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
11N540Diode Switching 400V 3A 2-Pin SOD-64 Ammo

New Jersey Semiconductor
New Jersey Semiconductor
diode
21N5400Silicon Rectifiers

CREAT BY ART 3A, 50V - 1000V Silicon Rectifiers 1N5400 - 1N5408 Taiwan Semiconductor FEATURES - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halo
Taiwan Semiconductor
Taiwan Semiconductor
rectifier
31N5400GENERAL PURPOSE RECTIFIERS

1N5400-1N5408 High-reliability discrete products and engineering services since 1977 GENERAL PURPOSE RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standa
Digitron Semiconductors
Digitron Semiconductors
rectifier
41N5400STANDARD RECOVERY RECTIFIERS 50-1000 VOLTS 3.0 AMPERE

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5400/D Axial-Lead Standard Recovery Rectifiers Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features: • • • • • High Curre
Motorola  Inc
Motorola Inc
rectifier
51N5400HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

1N5400 THRU 1N5408 HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES l High current capability l Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound l Exceeds environmental stand
Pan Jit International Inc.
Pan Jit International Inc.
rectifier


1N5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
11N50Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
21N50GOLD BONDED GERMANIUM DIODES

New Jersey Semiconductor
New Jersey Semiconductor
diode
31N50N-CHANNEL POWER MOSFET

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re
Unisonic Technologies
Unisonic Technologies
mosfet
41N50-KWN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary 1A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara
Unisonic Technologies
Unisonic Technologies
mosfet
51N500Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
61N5000Silicon Rectifiers

Microsemi Corporation
Microsemi Corporation
rectifier
71N5000Diode Switching 400V 3A 2-Pin TOP HAT

New Jersey Semiconductor
New Jersey Semiconductor
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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