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Datasheet 1N5348 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5348 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) Approve Sheet Part Number: 1N5348B~1N5388B
DATA SHEET
1N5348B~1N5388B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE- 11 to 200 Volts Power - 5.0 Watts
FEATURES
• Built-in strain relief • Glass passivated junction • Low inductance • Typical IR less than 5.0µA above 11V • Plastic p |  Pan Jit International Inc. | diode |
| 2 | 1N5348 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 1N5348B THRU 1N5388B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts
FEATURES l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Typical ID less than 1 A above 13V High temperature soldering : DO-201AE
260 /10 |  TRSYS | diode |
| 3 | 1N5348 | 5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
5 Watt Surmetic 40 Silicon Zener Diodes
This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this is in an axial-lead, transfer |  Motorola Inc | diode |
| 4 | 1N5348 | Diode Zener Single 11V 20% 5W 2-Pin Case T-18 |  New Jersey Semiconductor | diode |
| 5 | 1N5348 | Diode Zener Single 11V 20% 5W 2-Pin Case T-18 | New Jersey Semiconductor | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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