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Datasheet 1N483B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N483B | Small Signal Diode 1N483B Small Signal Diode
1N483B
Small Signal Diode
January 2005
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VRRM IF(AV) IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak For |  Fairchild Semiconductor | diode |
| 2 | 1N483B | LOW LEAKAGE RECTIFIERS 1N482B-1N486B
High-reliability discrete products and engineering services since 1977
LOW LEAKAGE RECTIFIERS
FEATURES: Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number Available Non-RoHS (standard) or RoHS compliant ( |  Digitron Semiconductors | rectifier |
| 3 | 1N483B | GENERAL PURPOSE SILICON DIODES • AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C |  Microsemi Corporation | diode |
| 4 | 1N483B | GENERAL PURPOSE SILICON DIODES • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED
1N483B 1N485B 1N486B
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C |  Compensated Deuices Incorporated | diode |
| 5 | 1N483B | Diode Switching 70V 0.2A 2-Pin DO-35 |  New Jersey Semiconductor | diode |
1N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N40 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N40 | N-CHANNEL POWER MOSFET 1N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
1A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-sta  Unisonic Technologies mosfet | | |
| 3 | 1N4000 | 10 WATT ZENER DIODES 1N2970 thru 1N3015B and 1N3993 thru 1N4000A
10 WATT ZENER DIODES
SCOTTSDALE DIVISION
DESCRIPTION These high power 10 W Zener diodes represented by the JEDEC registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of v Microsemi Corporation diode | | |
| 4 | 1N4000 | Zener Diode, Rectifier S O LID
STAT E
INC.
1N3993 – 1N4000
Your TOTAL solutions source!
10 WATTS ZENER DIODES
DO4
ZENER DIODES Low-voltage, alloy-junction zener diodes in hermetically sealed package with cathode connected to case. Polarity: Cathode-to-case (reverse polarity units are available and designed by an "  SOLID STATE diode | | |
| 5 | 1N4000 | 10W Zener Diodes http://www.Datasheet4U.com
 Motorola Semiconductors diode | | |
| 6 | 1N4000 | Diode Zener Single 7.5V 20% 10W 2-Pin DO-4 New Jersey Semiconductor diode | | |
| 7 | 1N4000-1 | Diode Zener Single 7.5V 10% 10W 2-Pin DO-4 New Jersey Semiconductor diode | |
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