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H6N03LAG PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H6N03LAG
部品説明 IPDH6N03LAG
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 



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H6N03LAG Datasheet, H6N03LAG PDF,ピン配置, 機能
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPDH6N03LA G IPFH6N03LA G
IPSH6N03LA G IPUH6N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
6 m
50 A
Type
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Package
Marking
PG-TO252-3-11
H6N03LA
PG-TO252-3-23
H6N03LA
PG-TO251-3-11
H6N03LA
PG-TO251-3-1
H6N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=50 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
50
350
150
6
±20
71
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.3
page 1
2006-05-11
Datasheet pdf - http://www.DataSheet4U.net/

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