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PDF PFF13N50 Data sheet ( Hoja de datos )
| Número de pieza | PFF13N50 | |
| Descripción | 500V N-Channel MOSFET | |
| Fabricantes | Power Device | |
| Logotipo |  |
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Feb 2009
FEATURES
Originative New Design
100% EAS Test
Rugged Gate Oxide Technology
Extremely Low Intrinsic Capacitances
Remarkable Switching Characteristics
Unequalled Gate Charge : 28 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half
bridge topology
PFC (Power Factor Correction)
SMPS (Switched Mode Power Supplies)
PFP13N50/PFF13N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on)typ = 0.46 Ω
ID = 12.5 A
Drain {
Gate
{
●
◀▲
●
●
Source
{
TO-220
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
PFP13N50
PFF13N50
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
12.5 12.5*
7.9 7.9*
50 50*
±30
810
12.5
17
5.5
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
170 56
1.35 0.45
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
PFP13N50
0.74
0.5
62.5
PFF13N50
2.23
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
Feb 2009
Power Device REV.A1
1 page  
Typical Characteristics (continued)
100
D =0.5
0.2
1 0 -1
0.1
0.05
0.02
0.01
10-2 single pulse
※ N otes :
1 . Z θ JC(t) = 0 .7 4 ℃ /W M a x .
2. D uty Factor, D =t1/t2
3 . T JM - T C = P D M * Z θ JC( t)
PDM
t1t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S quare W ave P ulse D uration [sec]
Figure 12. Transient Thermal Response Curve for PFP13N50
100 D =0.5
0.2
0.1
1 0 -1
0.05
0.02
0.01
10-2 single pulse
※ N otes :
1 . Z θ JC(t) = 2 .2 3 ℃ /W M a x.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P D M * Z θ JC( t)
PDM
t1t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Figure 13. Transient Thermal Response Curve for PFF13N50
Feb 2009
Power Device REV.A1
5 Page 
Reliability Qualification ( Continued )
D. High Temperature Storage ( HTS )
The purpose of this test is to expose time/temperature failure mechanisms and to evaluate
long-term strong stability.
Conditions: MIL-STD-750C 1031.4, JIS C 7021 B-10
TA=Tstg(max) 150 ℃
Sample Size
45
#of Fail
0
Cum. Fail%
0.0%
168hrs
0
300hrs
0
E. Pressure Cooker Test ( PCT )
Autoclave ( ACLV )
The purpose of this test is to evaluate the moisture resistance of non-hermetic components under
pressure/temperature conditions.
Conditions: MIL-STD-750C 1071.2, JIS C 7021 A-6
TA=121℃±2℃ RH=100% P=1 atmosphere (15psig)
Sample Size
22
#of Fail
0
Cum. Fail%
0.0%
48hrs
0
F. Temperature Cycle Air-to Air ( T/C )
The purpose of this test is to evaluate the ability of the device to withstand both exposure to
extreme temperature and the transition between temperature extreme, and to exposure excessive
thermal mismatch between materials.
Conditions: JESD22-A104, JIS C 7021 A-4
Air to air, -65℃~150℃, 10 minutes dwell time at each temperature
Sample Size
22
#of Fail
0
Cum. Fail%
0.0%
100cycles
0
200cycles
0
Feb 2009
Power Device REV.A1
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PFF13N50.PDF ] | |
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