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PDF SGC4563Z Data sheet ( Hoja de datos )
| Número de pieza | SGC4563Z | |
| Descripción | 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK | |
| Fabricantes | RFMD | |
| Logotipo |  |
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SGC4563ZSGC4563Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4563Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4563Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
Gain and RL versus Frequency
30
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
20 S21
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
-10 S11
-20
-30
-40
0.0 0.5 1.0 1.5 2.0 2.5
Frequency (GHz)
S22
Gain
IRL
ORL
3.0 3.5
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=15.6dBm at 1950MHz
OIP3=28.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
26.5
dB Freq=500MHz
22.5
25.5
28.5
dB Freq=*850MHz
18.5
20.5
22.5
dB Freq=1950MHz
Output Power at 1dB Compression
16.8
dBm Freq=500MHz
16.5
dBm
Freq = 850 MHz
14.0
15.6
dBm
Freq = 1950 MHz
Output Third Order Intercept Point
29.5
dBm Freq=500MHz
29.5
dBm
Freq = 850 MHz
26.0
28.5
dBm
Freq = 1950 MHz
Input Return Loss
14.0
18.0
dB Freq=1950MHz
Output Return Loss
10.0
14.0
dB Freq=1950MHz
Noise Figure
1.7 3.0 dB Freq=1930MHz
Device Operating Voltage
3V
Device Operating Current
37 48 59 mA
Thermal Resistance
120
°C/W
(RTH, j-l) Junction to lead
Test Conditions: VD=3.0V, ID=48mA, TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit Data
Unless Otherwise Noted
DS140527
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
1 page  
SGC4563Z
Typical Performance with 0.5GHz to 1GHz Application Circuit, VD=3V, ID=48mA
S12 versus Frequency
S22 versus Frequency
00
-40°C
25°C
-5
85°C
-5
-10 -10
-15 -15
-20 -20
-25 -25
-30
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Frequency (GHz)
-30
0.0 0.2 0.4 0.6 0.8
Frequency (GHz)
-40°C
25°C
85°C
1.0 1.2
Typical Performance with 1.7GHz to 2.2GHz Application Circuit, VD=3V, ID=48mA
Noise Figure versus Frequency
3.0
OIP3 versus Frequency
(0dBm/tone, 1MHz spacing)
34
2.5 32
-40°C
25°C
85°C
2.0
30
1.5
28
1.0
0.5
0.0
0.8
17
15
13
11
9
7
1.0 1.2 1.4 1.6 1.8
Frequency (GHz)
POUT vs PIN @ 2140MHz
Pout_25°C
Pout_-40°C
Pout_85°C
Bias_25°C
Bias_-40°C
Bias_85°C
25°C
85°C
2.0 2.2
80
75
70
65
60
55
26
24
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Frequency (GHz)
P1dB versus Frequency
20
18
16
14
5 50
3 45
1 40
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
Power In (dBm)
12 -40°C
25°C
85°C
10
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Frequency (GHz)
DS140527
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SGC4563Z.PDF ] | |
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