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PDF SGC2463Z Data sheet ( Hoja de datos )
| Número de pieza | SGC2463Z | |
| Descripción | 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK | |
| Fabricantes | RFMD | |
| Logotipo |  |
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SGC2463ZSGC2463Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC2463Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC2463Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC2463Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss VD = 3V, ID = 25mA
30
S21
20
10
0 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
-10 S22
-20 S11
-30
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
4
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=10.5dBm at 1950MHz
OIP3=23.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Small Signal Gain
17.4
19.8
21.3
dB 850MHz
12.9
14.4
15.9
dB 1950MHz
13.4
dB 2400MHz
Output Power at 1dB Compression
10.5
dBm
850 MHz
9.5 10.5
dBm
1950 MHz
9.9
dBm
2400 MHz
Output Third Order Intercept Point
22.5
dBm
850 MHz
21.5 23.5
dBm
1950 MHz
24.0
dBm
2400 MHz
Input Return Loss
10.0
14.0
dB 1950MHz
Output Return Loss
8.5 12.5
dB 1950MHz
Noise Figure
3.5 4.5 dB 1930MHz
Thermal Resistance
255
°C/W
junction - lead
Device Operating Voltage
3.0 V
Device Operating Current
22.0
26.0
30.0
mA
Test Conditions: VD=3V, ID=26mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL=25°C, ZS=ZL=50
Condition
DS140429
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 7
1 page  
SGC2463Z
Pin
3
1, 2,
4, 5
6
Function
RF IN
GND
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground inductance and
achieve optimum RF performance.
RF OUT/DC
BIAS
RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of opera-
tion.
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device pins 1,
2, 4, and 5 with several plated-through holes placed as
shown.
2. 1-2 ounce finished copper thickness is recommended.
3. RF I/O lines are 50Ω
SOT-363 Nominal Package Dimensions
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
DS140429
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 7
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGC2463Z.PDF ] | |
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