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PDF SGA3586Z Data sheet ( Hoja de datos )
| Número de pieza | SGA3586Z | |
| Descripción | CASCADABLE SiGe HBT MMIC AMPLIFIER | |
| Fabricantes | RFMD | |
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SGA3586ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA3586Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA3586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
32 ID = 35 mA (Typ.)
G AIN
24
IR L
0
-10
16
ORL
8
0
01
-20
TLEAD=+25ºC
-30
23
Frequency (GHz)
4
-40
5
Features
High Gain: 25dB at 850MHz
Cascadable 50Gain Block
High Output IP3: 25dBm typ.
at 1950MHz
Low Noise Figure: 2.5dB typ.
at 1950MHz
Low Current Draw: 35mA typ.
Single Voltage Supply Opera-
tion
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Small Signal Gain
22.5
25.0
27.5 dB 850MHz
18.0
20.0
22.0
dB 1950MHz
18.5
dB 2400MHz
Output Power at 1dB Compression
13.0
dBm 850MHz
11.0
12.5
dBm
1950 MHz
Output Third Intercept Point
24.5
dBm
850 MHz
23.0
25.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5000
MHz >10dB
Input Return Loss
9.5 11.0
dB 1950MHz
Output Return Loss
14.0
20.0
dB 1950MHz
Noise Figure
2.5 3.5 dB 1950MHz
Device Operating Voltage
3.0 3.25 3.5 V
Device Operating Current
31 35 39 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: ID=35mA Typ., TLEAD=25°C, ZS=ZL=50POUT per tone=-5dBm, OIP3 Tone Spacing=1MHz
Condition
DS130729
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6
1 page  
SGA3586Z
Application Schematic
RBIAS
VS
ID
1 uF 1000
pF
CD
RLDC
LC
Bias
Inductor
RF in
4
13
SGA3586Z
CB 2 VD CB
RF out
Application Circuit Element Values
Reference
Designator
100
Frequency (Mhz)
500 850 1950 2400
CB 1000 pF 220 pF 100 pF 68 pF 56 pF
CD 100 pF 100 pF 68 pF 22 pF 22 pF
LC 470 nH 68 nH 33 nH 22 nH 18 nH
3500
39 pF
15 pF
15 nH
Recommended Bias Resistance for ID = 35 mA
Supply Voltage (VS )
(Volts)
<5
5
6
7
8
9
10
Bias Resistance*
(Ohms)
N/R 50
79
107 136 164 193
* Bias Resistance = RBIAS+ RLDC = ( VS-VD ) / ID
Select RBIAS so that RBIAS + RLDC ~ the recommended bias resistance.
Use 1% or 5 % tolerance resisistors or parallel combinations to attain the
recommended bias resistance +/- 3%. RBIAS provides current stability over
temperature.
* N/R=Not Recommended. Contact Sirenza technical support for
guidance when available supply voltage is less than 5 Volts.
Evaluation Board Layout
V
S
1 uF
R
B IA S
1000 pF
C
D
L
C
C
B
C
B
DS130729
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SGA3586Z.PDF ] | |
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