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PDF SGA3286Z Data sheet ( Hoja de datos )
| Número de pieza | SGA3286Z | |
| Descripción | CASCADABLE SiGe HBT MMIC AMPLIFIER | |
| Fabricantes | RFMD | |
| Logotipo |  |
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SGA3286ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA3286Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high FT and excellent thermal per-
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. At 850MHz and 35mA, the
SGA3286Z typically provides +12.2dBm of 1dB compressed power using a single
positive voltage supply. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
VD= 2.6 V, ID= 35 mA (Typ.)
20
15 GAIN
IRL
10
ORL
5
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
Broadband Operation: DC to
5000 MHz
Cascadable 50
Patented SiGe Technology
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless, Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
13.0
14.5
16.0
dB 850MHz
13.0
dB 1950MHz
12.2
dB 2400MHz
Output Power at 1dB Compression
12.2
dBm 850MHz
11.3
dBm
1950 MHz
Output Third Intercept Point
25.5
dBm
850 MHz
24.8
dBm
1950 MHz
Bandwidth Determined by Return
Loss (>10dB)
5000
MHz
Input Return Loss
19.2
dB 1950MHz
Output Return Loss
22.7
dB 1950MHz
Noise Figure
3.8 dB 1950MHz
Device Operating Voltage
2.3 2.6 2.9 V
Device Operating Current
31 35 39 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=5V, ID=35mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=68, TL=25°C, ZS=ZL=50
DS110812
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 7
1 page  
SGA3286Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper opera-
tion.
Suggested Pad Layout
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
DS110812
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 7
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGA3286Z.PDF ] | |
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