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PDF SGA4286Z Data sheet ( Hoja de datos )
| Número de pieza | SGA4286Z | |
| Descripción | CASCADABLE SiGe HBT MMIC AMPLIFIER | |
| Fabricantes | RFMD | |
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SGA4286ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA4286Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA4286Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
16 VD= 3.2 V, ID= 45 mA (Typ.)
GAIN
12
IRL
8
4 ORL
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
Broadband Operation: DC to
5000 MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
12.0
13.5
15.0
dB 850MHz
12.0
dB 1950MHz
11.1 dB 2400MHz
Output Power at 1dB Compression
15.0
dBm
850 MHz
13.0
dBm
1950 MHz
Output Third Intercept Point
29.1
dBm
850 MHz
26.5
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5000
MHz >10dB
Input Return Loss
26.6
dB 1950MHz
Output Return Loss
22.9
dB 1950MHz
Noise Figure
3.7 dB 1950MHz
Device Operating Voltage
2.9 3.2 3.5 V
Device Operating Current
41 45 49 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=110Ω, TL=25°C, ZS=ZL=50Ω
DS100915
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 7
1 page  
SGA4286Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper opera-
tion.
Application Schematic
VS RBIAS
1 uF 1000
pF
CD
RF in
4
13
SGA4286Z
CB 2
LC
CB
Reference
Designator
500
Frequency (Mhz)
850
1950
2400
CB 220 pF 100 pF 68 pF 56 pF
CD 100 pF 68 pF 22 pF 22 pF
LC 68 nH 33 nH 22 nH 18 nH
3500
39 pF
15 pF
15 nH
RF out
Recommended Bias Resistor Values for ID=45mA
RBIAS=( VS-VD ) / ID
Supply Voltage(V ) 6 V 8 V 10 V 12 V
S
RBIAS
62 110 150 200
Note: RBIAS provides DC bias stability over temperature.
Evaluation Board Layout
CB
VS
RBIAS
LC
1 uF
1000 pF
C
D
CB
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 7
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