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PDF SGA0363Z Data sheet ( Hoja de datos )
| Número de pieza | SGA0363Z | |
| Descripción | SILICON GERMANIUM CASCADABLE GAIN BLOCK | |
| Fabricantes | RFMD | |
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SGA0363ZDC
to 5000MHz,
Silicon Germa-
nium Cascad-
able Gain
Block
SGA0363Z
DC to 5000MHz, SILICON GERMANIUM
CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
The SGA0363Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Small Signal Gain vs. Frequency
25
20
15
10
5
0
0123456
Frequency GHz
Features
DC to 5000MHz Operation
Single Voltage Supply
Low Current Draw: 11mA at
2.5V Typ.
High Output Intercept:
14dBm Typ. at 1950MHz
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Output Power at 1dB Compression
2.3
dBm
850 MHz
2.3
dBm
1950 MHz
1.6
dBm
2400 MHz
Third Order Intercept Point
14.2
dBm
850 MHz
14.0
dBm
1950 MHz
13.1
dBm
2400 MHz
Small Signal Gain
19.6
dB 850MHz
17.2 dB 1950MHz
16.2
dB 2400MHz
3dB Bandwidth
5000
MHz
Input VSWR
1.8:1
DC to 4500MHz
Output VSWR
1.7:1
DC to 4500MHz
Reverse Isolation
24.0 dB 850MHz
22.8
dB 1950MHz
22.1
dB 2400MHz
Noise Figure[1]
3.0 dB 1950MHz
Device Operating Voltage
2.5 V
Device Operating Current
9 11 13 mA
Thermal Resistance
255
°C/W
junction - lead
Test Conditions: VS=5V, ID=11mA Typ., TL=25°C. OIP3 Tone Spacing=1MHz, POUT per tone=-12dBm, RBIAS=220, ZS=ZL=50
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6
1 page  
SGA0363Z
Application Schematic
VS RBIAS
1 uF 1000
pF
CD
RF in
1,2
36
SGA0363Z
CB 4,5
LC
CB
RF out
Reference
Designator
500
Frequency (Mhz)
850
1950
2400
CB 220 pF 100 pF 68 pF 56 pF
CD 100 pF 68 pF 22 pF 22 pF
LC 68 nH 33 nH 22 nH 18 nH
3500
39 pF
15 pF
15 nH
Recommended Bias Resistor Values for ID=11mA
RBIAS=( VS-VD ) / ID
Supply Voltage(VS) 5 V 7.5 V 9 V 12 V
RBIAS
220 470 620 910
Note: RBIAS provides DC bias stability over temperature.
Evaluation Board Layout
VS
RBIAS
LC
1 uF
1000 pF
C
D
Mounting Instructions
1. Use a large ground pad area near device pins 1, 2,
4, and 5 with many plated through-holes as shown.
CB 2. We recommend 1 or 2 ounce copper. Measurements
CB for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SGA0363Z.PDF ] | |
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