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PDF SGA4563Z Data sheet ( Hoja de datos )
| Número de pieza | SGA4563Z | |
| Descripción | CASCADABLE SiGe HBT MMIC AMPLIFIER | |
| Fabricantes | RFMD | |
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SGA4563ZSGA4563Z
DC to 2500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-363
Product Description
The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
32
GAIN
VD= 3.5 V, ID= 45 mA (Typ.)
24
ORL
16
IRL
8
0
012345
Frequency (GHz)
0
-10
-20
-30
-40
6
Features
High Gain: 20.2dB at
1950 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
25.6
dB 850MHz
20.2
dB 1950MHz
18.6
dB 2400MHz
Output Power at 1dB Compression
15.0
dBm 850MHz
12.8
dBm
1950 MHz
Output Third Intercept Point
27.1
dBm
850 MHz
26.2
dBm
1950 MHz
Bandwidth Determined by Return
Loss
2500
MHz >10dB
Input Return Loss
19.9
dB 1950MHz
Output Return Loss
10.1 dB 1950MHz
Noise Figure
2.4 dB 1950MHz
Device Operating Voltage
3.6 V
Device Operating Current
40 45 49 mA
Thermal Resistance
(Junction - Lead)
255 °C/W
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=100, TL=25°C, ZS=ZL=50
DS140121
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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1 page  
SGA4563Z
Application Schematic
VS RBIAS
RF in
1 uF 1000
pF
CD
1,2
36
SGA4563Z
CB 4,5
LC
CB
RF out
Reference
Designator
CB
CD
LC
500
220 pF
100 pF
68 nH
Frequency (Mhz)
850
1950
2400
100 pF 68 pF 56 pF
68 pF 22 pF 22 pF
33 nH 22 nH 18 nH
3500
39 pF
15 pF
15 nH
Recommended Bias Resistor Values for ID=45mA
RBIAS=( VS-VD ) / ID
Supply Voltage(VS) 6 V 8 V 10 V 12 V
RBIAS
51 100 150 180
Note: RBIAS provides DC bias stability over temperature.
Evaluation Board Layout
Mounting Instructions:
1. Use a large droung pad area near device pins 1, 2, 4, and 5 with plated through-holes as shown.
2. We recommend 1 or 2 ounces copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1
ounce copper on both sides.
DS140121
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SGA4563Z.PDF ] | |
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