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RFGA2012 の電気的特性と機能

RFGA2012のメーカーはRFMDです、この部品の機能は「InGaP HBT LOW POWER LINEAR AMPLIFIER」です。


製品の詳細 ( Datasheet PDF )

部品番号 RFGA2012
部品説明 InGaP HBT LOW POWER LINEAR AMPLIFIER
メーカ RFMD
ロゴ RFMD ロゴ 




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RFGA2012 Datasheet, RFGA2012 PDF,ピン配置, 機能
RFGA2012
InGaP HBT
Low Power Lin-
ear Amplifier
RFGA2012
InGaP HBT LOW POWER LINEAR AMPLIFIER
Package: DFN, 8-Pin, 2mmx2mm
Features
High OIP3=35dBm at 1960MHz
Low DC Power: 3.3V, 23mA
Low NF = 1.6dB at 1960MHz
50MHz to 3000MHz Operation
Power Down Capability
Class 1C (1000V) HBM ESD
Rating
MSL 1 Rating
Common Platform Compatible
Applications
Low Power Linear Gain Stage
IF, Cellular, DCS, PCS, UMTS,
WLAN, WiMax, TD-SCDMA,
LTE Amplifiers
Low Power LNA
NC 1
RFIN 2
GND 3
NC 4
8 VBIAS
7 RFOUT/VCC
6 NC
5 GND
Functional Block Diagram
Product Description
The RFGA2012 is specifically designed to achieve high OIP3 with minimal
DC power. Ultra-linear performance has been demonstated in standard
frequency bands within 150MHz to 3GHz. The RFGA2012 features a
VBIAS pin that allows users to optimize the quiescent current for specific
requirements. The VBIAS pin also serves as a power-down pin. The
RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured
using RFMD's InGaP HBT process to minimize Beta process variation.
DS110215
Ordering Information
RFGA2012SR
RFGA2012SQ
RFGA2012TR7
RFGA2012TR13
RFGA2012PCK-410
RFGA2012PCK-411
7” Reel with 100 pieces
25-piece sample bag
7” Reel with 750 pieces
13” Reel with 2500 pieces
1800MHz to 2200MHz PCBA with 5-piece sample bag
2600MHz to 2700MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 12

1 Page





RFGA2012 pdf, ピン配列
RFGA2012
Parameter
2650 MHz
Frequency
Gain
Input Return Loss
Output Return Loss
P1dB
OIP3
Noise Figure
Power Supply
Operating Current (ICQ + IBIAS), Quiescent
Recommended Operating Voltage (VCE)
Power Down Current
Thermal Resistance (RTH)
Specification
Min. Typ. Max.
2600
2650
12
11
16
15
34
1.6
2700
23.0
3.3
365
5.0
20
Unit
MHz
dB
dB
dB
dBm
dBm
dB
Condition
VCC = 3.3V, ICQ = 23mA (includes IBIAS)
0dBm/tone, tone spacing = 1MHz
mA VCE=3.3V (includes IBIAS current ~2-3mA),
per 1960 EVB
V Collector-to-Emitter operating voltage
A VBIAS=0.0V, VCE=3.3V
C/W See RTH graph on page 3
DS110215
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 12


3Pages


RFGA2012 電子部品, 半導体
RFGA2012
Evaluation Board Schematic
1800MHz to 2200MHz Application Circuit
VBIAS
VCC
GND
VBIAS
VCC
P1
1
2
3
4
HDR_1X4
GND
C6
4.7uF
C9
1000pF
R1
160 ohm
C4
4.7uF
J1
RFIN
C1
1uF
L2
1nH
C2
0.5pF
R2
0.2pF
R4
10 ohm
1 NC
U1
VBIAS 8
2 RFIN RFOUT/VCC 7
3 NC
NC 6
4 GND
GND 5
L1
3.3nH
C3
1uF
J2
C11
0.9pF
RFOUT
Evaluation Board BOM
1800MHz to 2200MHz Application Circuit
Description
Reference Designator
Manufacturer
PCB
Low Noise, Linear Gain Block Amplifier
U1
RFMD
CAP, 4.7uF, 10%, 10V, X5R, 0603
C4, C6
TDK Corporation
CAP, 1000pF, 10%, 50V, X7R, 0402
C9
Murata Electronics
CAP, 1uF, 10%, 10V, X5R, 0402
CAP, 0.5pF, +/-0.1pF, 50V, HI-Q, 0402
CAP, 0.2pF, +/-0.05pF, 50V, HI-Q, 0402
CAP, 0.9pF, +/-0.1pF, 50V, HI-Q, 0402
IND, 1nH, +/-0.1nH, T/F, 0402
IND, 3.3nH, +/-0.1nH, T/F, 0402
RES, 160, 5%, 1/16W, 0402
RES, 10, 5%, 1/16W, 0402
CONN, SMA, END LNCH, FLT, 0.062"
CONN, HDR, ST, PLRZD, 4-PIN, 0.100"
DNP
C1, C3
C2
R2
C11
L2
L1
R1
R4
J1, J2
P1
C5, C7, C8, C10, C14, R3
Murata Electronics
Johanson Technology
Johanson Technology
Johanson Technology
Murata Electronics
Murata Electronics
Kamaya, Inc
Kamaya, Inc
Emerson Network Power
ITW Pancon
Manufacturer’s P/N
GA2012410(A)
RFGA2012
C1608X5R1A475K
GRM155R71H102KA01E
GRM155R61A105KE15D
500R07S0R5BV4TD
500R07S0R2AV4TD
500R07S0R9BV4TD
LQP15MN1N0B02D
LQP15MN3N3B02D
RMC1/16S-161JTH
RMC1/16S-100JTH
142-0701-821
MPSS100-4-C
6 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110215

6 Page



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共有リンク

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部品番号部品説明メーカ
RFGA2012

InGaP HBT LOW POWER LINEAR AMPLIFIER

RFMD
RFMD


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