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PDF FTP06N03N Data sheet ( Hoja de datos )
| Número de pieza | FTP06N03N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | IPS | |
| Logotipo |  |
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FTP06N03N
N-Channel MOSFET
Applications:
• Automotive/Telecom
• DC Motor Control
• Class D Amplifier
• Uninterruptible Power Supply (UPS)
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER
FTP06N03N
PACKAGE
TO-220
BRAND
FTP06N03N
Pb Lead Free Package and Finish
VDSS
25V
RDS(ON) (Max.)
6 m:
ID
65A
D
GDS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Engergy
L=1.0 mH
IAS
dv/dt
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FTP06N03N
25
65*
Figure 3
Figure 6
65
0.43
± 20
205
Figure 8
5.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Package Current Rating, 50 Amps.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
©2010 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 2.3
-- -- 62
Page 1 of 9
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175oC.
1 cubic foot chamber, free air.
FTP06N03N REV. A Jun. 2010
1 page  
Figure 6. Maximum Peak Current Capability
1000
TRANSCONDUCTANCE
100 MAY LIMIT CURRENT IN
THIS REGION
10
VGS = 10V
1
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
, = , -----------–-----7---&-
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
140
PULSE DURATION = 10 μs
120 DUTY CYCLE = 0.5% MAX
TC=25°C
100
80
60
40 +175 oC
+25 oC
20 -55 oC
0
3.0
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Figure 8. Unclamped Inductive Switching
Capability
1000
100
STARTING TJ = 25 oC
STARTING TJ = 150 oC
10
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If Rz 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
1
1E-6
10E-6
100E-6
1E-3
tAV, Time in Avalanche (s)
10E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
0.014
0.012
PULSE DURATION = 10 μs
DUTY CYCLE = 0.5% MAX
TC=25°C
0.010
0.008
VGS = 10V
0.006
0
50 100 150 200
ID, Drain Current (A)
250
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-75 -50 -25 0
PULSE DURATION = 10 μs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID =30A
25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
©2010 InPower Semiconductor Co., Ltd.
Page 5 of 9
FTP06N03N REV. A Jun. 2010
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FTP06N03N.PDF ] | |
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