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K10A60W PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 K10A60W
部品説明 TK10A60W
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 

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K10A60W Datasheet, K10A60W PDF,ピン配置, 機能
Preliminary
TK10A60W
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK10A60W
Switching Regulator Applications
Low drain-source on-resistance : RDS (ON) = 0.327
by used to Super Junction Structure : DTMOS
(typ.)
Easy to control Gate switching
Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
1.14 ± 0.15
Characteristics
Symbol
Drain-source voltage
Gate-source voltage
VDSS
VGSS
Drain current (Continuous) (Note 1)
ID
Drain current (Pulsed)
(Note 1)
Drain power dissipation (Tc = 25°C)
IDP
PD
Single pulse avalanche energy
(Note 2)
EAS
Avalanche current
Drain reverse current (Continuous)
(Note 1)
IAR
IDR
Drain reverse current (Pulsed) (Note 1) IDRP
Channel temperature
Tch
Storage temperature range
Tstg
Isolation voltage (t = 1.0s)
Mounting torque
VISO(RMS)
TOR
Rating
600
±30
9.7
38.8
30
69
4.9
9.7
38.8
150
-55 to 150
2000
0.6
Unit
V
V
A
A
W
mJ
A
A
A
°C
°C
V
Nm
0.69 ± 0.15
0.2 M A
2.54 2.54
123
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.17 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.0 mH, RG = 25 , IAR = 4.9 A
This transistor is an electrostatic-sensitive device. Handle with care.
Internal Connection
2
1
3
1 2012-03-26

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