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PDF IXGQ28N120BD1 Data sheet ( Hoja de datos )
| Número de pieza | IXGQ28N120BD1 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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High Voltage IGBT with Diode
IXGQ 28N120B
IXGQ 28N120BD1
V
CES
IC25
VCE(sat)
tfi(typ)
= 1200 V
= 50 A
= 3.5 V
= 160 ns
Symbol
Test Conditions
VCES
VCGR
V
GES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
V
GE
=
15
V,
T
J
=
125°C,
R
G
=
10
Ω
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
M Mounting torque
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
D1
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
50 A
28 A
150 A
I = 60
CM
@0.8 VCES
250
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
6g
TO-3P (IXGQ)
G
CE
G = Gate
E = Emitter
(TAB)
C = Collector
TAB = Collector
Features
z International standard package
z IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
z MOS Gate turn-on
- drive simplicity
z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VCE = VGE
2.5 5.0 V
VCE = VCES
VGE = 0 V
TJ = 25°C
28N120B
28N120BD1
25 µA
50 µA
VCE = 0 V, VGE = ±20 V
±100 nA
IC = 28A, VGE = 15 V
Note 2
T=125°C
2.9 3.5 V
2.8
Advantages
z Saves space (two devices in one
package)
z Easy to mount with 1 screw
(isolated mounting screw hole)
z Reduces assembly time and cost
© 2003 IXYS All rights reserved
DS99135(12/03)
1 page  
Fig. 13. De pende nce of Turn-off
Sw itching Tim e on Te m perature
550
500
450
400
350
td(off)
tfi - - - - - -
RG = 5Ω
VGE = 15V
VCE = 960V
IC = 14A
300
250
200
IC = 28A
150
100
IC = 56A
IC = 14A
50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
1000
Fig. 15. Capacitance
f = 1 MHz
Cies
IXGQ 28N120B
IXGQ28N120BD1
Fig. 14. Gate Charge
15
VCE = 600V
IC= 28A
12 IG= 10mA
9
6
3
0
0 10 20 30 40 50 60 70 80 90 100
Q G - nanoCoulombs
Coes
100
10
0
1.00
Cres
5 10 15 20 25 30 35 40
VC E - Volts
Fig. 16. Maxim um Trans ient Therm al Res istance
0.50
0.10
1
© 2003 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGQ28N120BD1.PDF ] | |
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