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IXGQ28N120B の電気的特性と機能

IXGQ28N120BのメーカーはIXYSです、この部品の機能は「High Voltage IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGQ28N120B
部品説明 High Voltage IGBT
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGQ28N120B Datasheet, IXGQ28N120B PDF,ピン配置, 機能
High Voltage IGBT with Diode
IXGQ 28N120B
IXGQ 28N120BD1
V
CES
IC25
VCE(sat)
tfi(typ)
= 1200 V
= 50 A
= 3.5 V
= 160 ns
Symbol
Test Conditions
VCES
VCGR
V
GES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
V
GE
=
15
V,
T
J
=
125°C,
R
G
=
10
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
M Mounting torque
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
D1
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
50 A
28 A
150 A
I = 60
CM
@0.8 VCES
250
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
6g
TO-3P (IXGQ)
G
CE
G = Gate
E = Emitter
(TAB)
C = Collector
TAB = Collector
Features
z International standard package
z IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
z MOS Gate turn-on
- drive simplicity
z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VCE = VGE
2.5 5.0 V
VCE = VCES
VGE = 0 V
TJ = 25°C
28N120B
28N120BD1
25 µA
50 µA
VCE = 0 V, VGE = ±20 V
±100 nA
IC = 28A, VGE = 15 V
Note 2
T=125°C
2.9 3.5 V
2.8
Advantages
z Saves space (two devices in one
package)
z Easy to mount with 1 screw
(isolated mounting screw hole)
z Reduces assembly time and cost
© 2003 IXYS All rights reserved
DS99135(12/03)

1 Page





IXGQ28N120B pdf, ピン配列
Fig. 1. Output Characte ristics
@ 25 Deg. C
56
VGE = 15V
49 13V
11V
42
35 9V
28
21
7V
14
7
5V
0
0.5 1 1.5 2 2.5 3 3.5 4
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
56
VGE = 15V
49 13V
11V
42
9V
35
28
7V
21
14
7
5V
0
0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
7
TJ = 25ºC
6
5 IC = 56A
28A
14A
4
3
2
6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2003 IXYS All rights reserved
IXGQ28N120B
IXGQ 28N120BD1
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
270
240
VGE = 17V
15V
210 13V
180
150 11V
120
90 9V
60
30 7V
0
0 2 4 6 8 10 12 14 16 18 20
VC E - Volts
Fig. 4. De pende nce of VCE(sat) on
Tem perature
1.3
VGE = 15V
1.2
IC = 56A
1.1
1.0
0.9 IC = 28A
0.8
0.7 IC = 14A
0.6
0
25 50 75 100 125
TJ - Degrees Centigrade
150
100
90
80
70
60
50
40
30
20
10
0
4
Fig. 6. Input Adm ittance
TJ = 125ºC
25ºC
-40ºC
56789
VG E - Volts
10


3Pages


IXGQ28N120B 電子部品, 半導体
30
A
25
IF 20
15
10
TVJ=150°C
T =100°C
VJ
5
2000
TVJ= 100°C
nC VR = 600V
1500
Qr
1000
IF= 20A
IF= 10A
IF= 5A
TVJ= 25°C
500
IXGQ 28N120B
IXGQ28N120BD1
40
TVJ= 100°C
A VR = 600V
30
IRM
IF= 20A
20 IF= 10A
IF= 5A
10
0
0
Fig. 17
1 2 3 4V
VF
Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
0
100
Fig. 18
A/µs 1000
-diF/dt
Reverse recovery charge Qr
versus -diF/dt
150
ns
140
trr
130
120
110
TVJ= 100°C
VR = 600V
IF= 20A
IF= 10A
IF= 5A
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 19 Peak reverse current IRM
versus -diF/dt
120
V
VFR
80
tfr
TVJ= 100°C
IF = 10A
1.2
µs
VFR tfr
0.8
40 0.4
100
0.0
0
40 80 120 °C 160
TVJ
Fig. 20 Dynamic parameters Qr, IRM
versus TVJ
10
K/W
1
ZthJC
0.1
90
0
Fig. 21
200 400 600 A8/0µ0s 1000
-diF/dt
Recovery time trr versus -diF/dt
0 0.0
0 200 400 600 A80/µ0s 1000
diF/dt
Fig. 22 Peak forward voltage VFR and
tfr
versus di /dt
F
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 1.449
2 0.558
3 0.493
0.0052
0.0003
0.017
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 23 Transient thermal resistance junction to case
0.1
DSEP 8-12A
s1
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

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部品番号部品説明メーカ
IXGQ28N120B

High Voltage IGBT

IXYS
IXYS
IXGQ28N120BD1

High Voltage IGBT

IXYS
IXYS


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