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STR-4A60SのメーカーはSemiWell Semiconductorです、この部品の機能は「Sensitive Gate Triacs」です。 |
部品番号 | STR-4A60S |
| |
部品説明 | Sensitive Gate Triacs | ||
メーカ | SemiWell Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとSTR-4A60Sダウンロード(pdfファイル)リンクがあります。 Total 5 pages
www.datasheet4u.com
SemiWell Semiconductor
Sensitive Gate Triacs
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ High Commutation dv/dt
◆ Sensitive Gate Triggering 4 Mode
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
STR4A60S
Symbol
○ 2.T2
▼▲
○ 3.Gate
1.T1 ○
TO-126
321
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t
TC = 95 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
PGM
PG(AV)
IGM
VGM
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Ratings
600
4.0
30/33
4.5
1.5
0.1
1.0
7.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A2s
W
W
A
V
°C
°C
Jan, 2003. Rev. 3
copyright@SemiWell Semiconductor Co., LTd., All rights reserved.
1/5
1 Page www.datasheet4u.com
Fig 1. Gate Characteristics
101 VGM (7V)
PGM (1.5W)
100 25 ℃
I+GT1
I -GT1
I -GT3
10-1
100
25 ℃
I+GT3
PG(AV) (0.1W)
VGD(0.2V)
101 102
Gate Current [mA]
103
Fig 3. On State Current vs.
Maximum Power Dissipation
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
π θ 2π
θ
360°
θ : Conduction Angle
0.5 1.0 1.5 2.0 2.5 3.0 3.5
RMS On-State Current [A]
θ = 180o
θ = 150o
θ = 120o
θ = 90o
θ = 60o
θ = 30o
4.0 4.5 5.0
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
35
30
25 60Hz
20
15 50Hz
10
5
0
100 101
Time (cycles)
102
STR4A60S
Fig 2. On-State Voltage
102
101
125 oC
100
25 oC
10-1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
On-State Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
130
125
120
115
110 π θ 2π
θ
105
360°
100 θ : Conduction Angle
θ
θ
θ
θ
=
=
=
=
196320000oooo
θ = 150o
θ = 180o
95
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
103
V
+
GT1
V
-
GT1
V-
102 GT3
101
-50
V
+
GT3
0 50 100
Junction Temperature [oC]
150
3/5
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ STR-4A60S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STR-4A60S | Sensitive Gate Triacs | SemiWell Semiconductor |
STR-4A60S | Sensitive Gate Triacs | TGS |