|
|
K3142のメーカーはHitachi Semiconductorです、この部品の機能は「MOSFET ( Transistor ) - 2SK3142」です。 |
部品番号 | K3142 |
| |
部品説明 | MOSFET ( Transistor ) - 2SK3142 | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとK3142ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
2SK3142
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 4 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
ADE-208-681A (Z)
2nd. Edition
February 1999
D
G
123
1. Gate
2. Drain
3. Source
S
1 Page 2SK3142
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
30
—
—
1.0
—
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
45
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
Note: 1. Pulse test
Typ
—
—
—
—
4.0
5.5
75
6800
1550
500
130
16
30
50
340
560
350
1.0
70
Max
—
±0.1
10
2.5
5.0
8.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 1
ID = 30 A, VGS = 10 V Note 1
ID = 30 A, VGS = 4 V Note 1
ID = 30 A, VDS = 10 V Note 1
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 10 V
ID = 60 A
VGS = 10 V, ID = 30 A
RL = 0.33 Ω
IF = 60 A, VGS = 0
IF = 60 A, VGS = 0
diF/ dt = 50 A/ µs
3
3Pages 2SK3142
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
30000
10000
3000
1000
300
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
Crss
100
0
10 20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
I D = 60 A
40 VGS
30
VDS
20
VDS = 20 V
10 V
5V
20
16
12
8
10 VDS = 20 V
4
10 V
5V
0
0 80 160 240 320 400
Gate Charge Qg (nc)
1000
500
200
100
50
Switching Characteristics
t d(off)
tf
tr
t d(on)
20
10
0.1 0.2
VGS = 10 V, V DD = 10 V
PW = 5 µs, duty < 1%
0.5 1 2 5 10 20 50 100
Drain Current I D (A)
6
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ K3142 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
K3140 | MOSFET ( Transistor ) - 2SK3140 | Hitachi Semiconductor |
K3141 | Silicon N-Channel MOS FET | Renesas |
K3142 | MOSFET ( Transistor ) - 2SK3142 | Hitachi Semiconductor |
K3148 | MOSFET ( Transistor ) - 2SK3148 | Hitachi Semiconductor |