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PDF IXFK32N80P Data sheet ( Hoja de datos )
| Número de pieza | IXFK32N80P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 32N80P
IXFX 32N80P
VDSS
ID25
RDS(on)
trr
= 800 V
= 32 A
≤ 270 mΩ
≤ 250 ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 4 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-264)
TO-264
PLUS247
Maximum Ratings
800 V
800 V
±30 V
±40 V
32 A
70 A
16 A
50 mJ
2.0 J
10 V/ns
TO-264 (IXFK)
G
DS
PLUS247 (IXFX)
(TAB)
830 W
-55 ... +150
150
-55 ... +150
300
260
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
G = Gate
S = Source
Features
D = Drain
Tab = Drain
(TAB)
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
800 V
VGS(th)
VDS = VGS, ID = 8 mA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
270 m Ω
l International standard packages
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99425E(01/06)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFK32N80P.PDF ] | |
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