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IRLB4132PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRLB4132PbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLB4132PbFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
Approved
(Not Released)
PD - TBD
IRLB4132PbF
Applications
l Optimized for UPS/Inverter Applications
l Low Voltage Power Tools
Benefits
l Best in Class Performance for UPS/Inverter
Applications
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
VDSS
30V
G
Gate
HEXFET® Power MOSFET
RDS(on) max Qg
3.5mΩ
36nC
D
DS
G
TO-220AB
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
hMaximum Power Dissipation
hMaximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
hJunction-to-Case
Parameter
Case-to-Sink, Flat Greased Surface
gJunction-to-Ambient
Max.
30
± 20
f150
100
78
620
140
68
0.90
-55 to + 175
300 (1.6mm from case)
x10lbfxin (1.1N m)
Typ.
–––
0.5
–––
Max.
1.11
–––
62
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through are on page 9
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1
03/27/09
1 Page IRLB4132PbF
1000
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
≤60µs PULSE WIDTH
Tj = 25°C
10
0.1
3.0V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
3.0V
10
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
2.0
ID = 78A
VGS = 10V
1.5
10
VDS = 15V
≤60µs PULSE WIDTH
1.0
12345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
3Pages IRLB4132PbF
9
ID = 40A
8
7
6
5
TJ = 125°C
4
3 TJ = 25°C
2
3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1400
1200
1000
ID
TOP 11A
18A
BOTTOM 32A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 13c. Maximum Avalanche Energy
vs. Drain Current
VDS
VGS
RG
RD
D.U.T.
+-V D D
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 14a. Switching Time Test Circuit
VDS
90%
IAS
Fig 13b. Unclamped Inductive Waveforms
6
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
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6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRLB4132PbF | Power MOSFET ( Transistor ) | International Rectifier |