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IRFSL4010PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL4010PbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFSL4010PbF Datasheet, IRFSL4010PbF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 96186A
IRFS4010PbF
IRFSL4010PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
100V
3.9m:
4.7m:
S ID
180A
DD
S
G
D2Pak
IRFS4010PbF
S
D
G
TO-262
IRFSL4010PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
fRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jkJunction-to-Case
iJunction-to-Ambient (PCB Mount)
www.irf.com
Max.
180
127
720
375
2.5
± 20
31
-55 to + 175
300
318
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
07/07/11

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