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PDF IXFX80N50Q3 Data sheet ( Hoja de datos )
| Número de pieza | IXFX80N50Q3 | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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Advance Technical Information
HiperFETTM
Power MOSFETs
Q3-Class
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFK80N50Q3
IXFX80N50Q3
VDSS =
ID25 =
≤RDS(on)
trr ≤
500V
80A
65mΩ
250ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
500
500
±30
±40
80
240
80
5
V
V
V
V
A
A
A
J
50
1250
-55 ... +150
150
-55 ... +150
300
260
1.13/10
20..120 /4.5..27
10
6
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.5 6.5 V
±200 nA
50 μA
2 mA
65 mΩ
G
D
S
PLUS247 (IXFX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Low Intrinsic Gate Resistance
z Low Package Inductance
z Fast Intrinsic Rectifier
z Low RDS(on) and QG
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z Temperature and Lighting Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS100299(02/11)
1 page  
IXFK80N50Q3
IXFX80N50Q3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
0.2 aaaaa
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_80N50Q3(Q8)02-18-11
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