|
|
PDF FQA13N50CF Data sheet ( Hoja de datos )
| Número de pieza | FQA13N50CF | |
| Descripción | 500V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FQA13N50CF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
FQA13N50CF
500V N-Channel MOSFET
Features
• 15A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge (typical 43nC)
• Low Crss (typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
• RoHS compliant
July 2007
FRFET®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-3P
FQA Series
G
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
S
FQA13N50CF
500
15
9.5
60
± 30
860
15
21.8
4.5
218
1.56
-55 to +150
300
Typ
--
0.24
--
Max
0.58
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA13N50CF Rev. A1
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQA13N50CF Rev. A1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FQA13N50CF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FQA13N50C | 500V N-Channel MOSFET | Fairchild Semiconductor |
| FQA13N50CF | 500V N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |