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PDF BUK9107-40ATC Data sheet ( Hoja de datos )
| Número de pieza | BUK9107-40ATC | |
| Descripción | N-channel TrenchPLUS logic level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BUK9107-40ATC
N-channel TrenchPLUS logic level FET
Rev. 04 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Low conduction losses due to low
on-state resistance
Q101 compliant
1.3 Applications
12 V and 24 V high power motor
drives
Automotive and general purpose
power switching
Electrical Power Assisted Steering
(EPAS)
Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
ID drain current
Ptot
Tj
RDSon
total power dissipation
junction temperature
drain-source on-state
resistance
SF(TSD)
VF(TSD)
temperature sense diode
temperature coefficient
temperature sense diode
forward voltage
Conditions
VGS = 5 V; Tmb = 25 °C; see Figure 2;
see Figure 3
Tmb = 25 °C; see Figure 1
VGS = 10 V; ID = 50 A; Tj = 25 °C
VGS = 4.5 V; ID = 50 A; Tj = 25 °C
VGS = 5 V; ID = 50 A; Tj = 25 °C;
see Figure 7; see Figure 8
IF = 250 µA; Tj > -55 °C; Tj < 175 °C
IF = 250 µA; Tj = 25 °C
[1] Current is limited by power dissipation chip rating.
Min Typ Max Unit
[1] - - 140 A
- - 272 W
-55 -
175 °C
- 5.2 6.2 mΩ
- 6 7.7 mΩ
-
5.8 7
mΩ
-1.4 -1.54 -1.68 mV/K
648 658 668 mV
1 page  
NXP Semiconductors
BUK9107-40ATC
N-channel TrenchPLUS logic level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from mounted on printed-circuit board;
junction to ambient
minimum footprint
thermal resistance from see Figure 4
junction to mounting
base
Min Typ Max Unit
- - 50 K/W
- - 0.55 K/W
1
Z th(j-mb)
(K/W) δ = 0.5
10-1 0.2
0.1
0.05
0.02
10-2
Single Shot
03ne76
P δ = tp
T
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1 tp(s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9107-40ATC_4
Product data sheet
Rev. 04 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BUK9107-40ATC
N-channel TrenchPLUS logic level FET
700
VF
(mV)
600
03ne84
500
400
0
50 100 150 200
Tj (°C)
−1.70
SF
(mV/K)
−1.60
−1.50
−1.40
645
max
03ne85
typ
min
655 665 675
VF (mV)
Fig 17. Forward voltage of temperature sense diode as
a function of junction temperature; typical
values
Fig 18. Temperature coefficient of temperature sense
diode as a function of forward voltage; typical
values
100
IS
(A)
80
60
40
20
0
0.0
Tj = 175 ºC
03ne88
Tj = 25 ºC
0.5 1.0 VSD (V) 1.5
Fig 19. Reverse diode current as a function of reverse diode voltage; typical values
BUK9107-40ATC_4
Product data sheet
Rev. 04 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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