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BT131-800D の電気的特性と機能

BT131-800DのメーカーはNXP Semiconductorsです、この部品の機能は「Triacs logic level」です。


製品の詳細 ( Datasheet PDF )

部品番号 BT131-800D
部品説明 Triacs logic level
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BT131-800D Datasheet, BT131-800D PDF,ピン配置, 機能
BT131 series D and E
Triacs logic level
Rev. 3 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate triacs in a SOT54 plastic package.
1.2 Features and benefits
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
General purpose switching and phase control
1.4 Quick reference data
VDRM 600 V (BT131-600D)
VDRM 800 V (BT131-800D)
IT(RMS) 1 A
VDRM 600 V (BT131-600E)
VDRM 800 V (BT131-800E)
ITSM 12.5 A
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
main terminal 2 (T2)
gate (G)
main terminal 1 (T1)
Simplified outline
Symbol
T2
sym051
T1
G
321
SOT54 (TO-92)

1 Page





BT131-800D pdf, ピン配列
NXP Semiconductors
BT131 series D and E
Triacs logic level
1.5
Ptot
(W)
1
α
α
0.5
003aab038 35
α =180°
120°
90°
60°
30°
Tlead(max)
(°C)
65
95
0 125
0 0.2 0.4 0.6 0.8 1 IT(RMS) (A) 1.2
a = form factor = IT(RMS) / IT(AV)
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
16
ITSM
(A)
12
8
003aab041
IT ITSM
t
T
Tj = 25 °C max
4
0
1 10 102 103
n
Fig 2.
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT131_SER_D_E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
3 of 13


3Pages


BT131-800D 電子部品, 半導体
NXP Semiconductors
6. Characteristics
Table 5. Characteristics
Tj = 25 C unless otherwise stated.
Symbol Parameter
Conditions
Static characteristics
IGT gate trigger current VD = 12 V; IT = 100 mA;
see Figure 8
T2+ G+
T2+ G
T2G
T2G+
IL latching current VD = 12 V; IGT = 100 mA;
see Figure 10
T2+ G+
T2+ G
T2G
T2G+
IH holding current
VD = 12 V; IGT = 100 mA;
see Figure 11
VT on-state voltage
VGT gate trigger voltage
ID off-state current
Dynamic characteristics
IT = 1.4 A; see Figure 9
IT = 100 mA; see Figure 7
VD = 12 V; Tj = 25 C
VD = 400 V; Tj = 125 C
VD = VDRM(max); Tj = 125 C
dVcom/dt rate of change of
commutating voltage
dVD/dt rate of rise of off-state
voltage
VDM = 400 V; Tj = 125 C;
dIcom/dt = 0.5 A/ms
VDM = 67 % of VDRM(max);
Tj = 125 C; exponential
waveform; RGK = 1 k;
see Figure 12
tgt gate-controlled
turn-on time
ITM = 1.5 A; VD = VDRM(max);
IG = 100 mA; dIG/dt = 5 A/s
BT131 series D and E
Triacs logic level
BT131-600D
BT131-800D
Min Typ Max
BT131-600E
BT131-800E
Min Typ Max
Unit
- - 5 - - 10 mA
- - 5 - - 10 mA
- - 5 - - 10 mA
- - 7 - - 10 mA
- - 10 - - 15 mA
- - 20 - - 25 mA
- - 10 - - 15 mA
- - 10 - - 15 mA
- 1.3 10 - 1.3 10 mA
- 1.2 1.5 - 1.2 1.5 V
- 0.7 1.5 - 0.7 1.5 V
0.2 0.3
- 0.2 0.3
-V
- 0.1 0.5 - 0.1 0.5 mA
3-
20 -
-5-
- 50 -
- V/s
- V/s
- 2 - - 2 - s
BT131_SER_D_E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
6 of 13

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
BT131-800

Triacs

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BT131-800

Triacs logic level

NXP Semiconductors
NXP Semiconductors
BT131-800D

Triacs logic level

NXP Semiconductors
NXP Semiconductors
BT131-800E

Triacs logic level

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NXP Semiconductors


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