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GW20NC60VD の電気的特性と機能

GW20NC60VDのメーカーはSTMicroelectronicsです、この部品の機能は「STGW20NC60VD」です。


製品の詳細 ( Datasheet PDF )

部品番号 GW20NC60VD
部品説明 STGW20NC60VD
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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GW20NC60VD Datasheet, GW20NC60VD PDF,ピン配置, 機能
STGW20NC60VD
N-CHANNEL 30A - 600V TO-247
Very Fast PowerMESH™ IGBT
Table 1: General Features
TYPE
VCES VCE(sat) (Max)
IC
@25°C
@100°C
STGW20NC60VD 600 V
< 2.5 V
30 A
s OFF LOSSES INCLUDE TAIL CURRENT
s LOSSES INCLUDE DIODE RECOVERY
ENERGY
s HIGH CURRENT CAPABILITY
s HIGH FREQUENCY OPERATION UP TO 50
KHz
s VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE
s LOWER CRES /CIES RATIO
s NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESHIGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency applications.
Figure 1: Package
3
2
1
TO-247
Weight: 4.41gr ± 0.01
Max Clip Pressure: 150 N/mm2
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH FREQUENCY INVERTERS
s SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
s UPS
s MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE
STGW20NC60VD
MARKING
GW20NC60VD
PACKAGE
TO-247
PACKAGING
TUBE
July 2004
Rev. 4
1/11

1 Page





GW20NC60VD pdf, ピン配列
STGW20NC60VD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs(1)
Cies
Coes
Cres
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 15 V, IC= 20 A
VCE = 25V, f = 1 MHz, VGE = 0
15
2200
225
50
S
pF
pF
pF
Qg Total Gate Charge
Qge Gate-Emitter Charge
Qgc Gate-Collector Charge
ICL Turn-Off SOA Minimum
Current
Table 8: Switching On
VCE = 390 V, IC = 20 A,
VGE = 15V,
(see Figure 21)
Vclamp = 480 V , Tj = 150°C
RG = 10 Ω, VGE= 15V
100 140 nC
16 nC
45 nC
100 A
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
tr
(di/dt)on
Eon (2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
VCC = 390 V, IC = 20 A
RG= 3.3, VGE= 15V, Tj= 25°C
(see Figure 19)
31 ns
11 ns
1600
A/µs
220 300 µJ
td(on)
tr
(di/dt)on
Eon (2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
VCC = 390 V, IC = 20 A
RG= 3.3, VGE= 15V, Tj=
125°C
(see Figure 19)
31
11.5
1500
450
ns
ns
A/µs
µJ
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
tr(Voff)
td(off)
tf
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Vcc = 390 V, IC = 20 A,
RGE = 3.3 , VGE = 15 V
TJ = 25 °C
(see Figure 19)
28 ns
100 ns
75 ns
Eoff (3)
Ets
Turn-off Switching Loss
Total Switching Loss
330 450 µJ
550 750 µJ
tr(Voff)
td(off)
tf
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Vcc = 390 V, IC = 20 A,
RGE = 3.3 , VGE = 15 V
Tj = 125 °C
(see Figure 19)
66 ns
150 ns
130 ns
Eoff (3) Turn-off Switching Loss
Ets Total Switching Loss
(3)Turn-off losses include also the tail of the collector current.
770
1220
µJ
µJ
3/11


3Pages


GW20NC60VD 電子部品, 半導体
STGW20NC60VD
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temper-
ature
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 14: Total Switching Losses vs Collector
Current
6/11

6 Page



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部品番号部品説明メーカ
GW20NC60V

STGW20NC60V

STMicroelectronics
STMicroelectronics
GW20NC60VD

STGW20NC60VD

STMicroelectronics
STMicroelectronics


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