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MGA-631P8のメーカーはAVAGOです、この部品の機能は「Active Bias Low Noise Amplifier」です。 |
部品番号 | MGA-631P8 |
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部品説明 | Active Bias Low Noise Amplifier | ||
メーカ | AVAGO | ||
ロゴ | |||
このページの下部にプレビューとMGA-631P8ダウンロード(pdfファイル)リンクがあります。 Total 16 pages
MGA-631P8
Low Noise, High Linearity, Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-631P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA) with active
bias. The LNA has low noise with excellent input return
loss and high linearity achieved through the use of Avago
Technologies’ proprietary 0.5um GaAs Enhancement-
mode pHEMT process. The LNA has an extra feature that
allows a designer to adjust supply current and gain ex-
ternally. Due to the high isolation between the input and
output, gain can be adjusted independently through
a resistor in series with a blocking capacitor from the
output pin to FB1 pin, without affecting the noise figure.
It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Thin
Small Leadless Package (TSLP) package. The compact
footprint and low profile coupled with low noise, high
gain, excellent input return loss and high linearity make
the MGA-631P8 an ideal choice as an LNA for cellular in-
frastructure for GSM, CDMA, GPS and ISM applications.
It is designed for optimum use between 400MHz to
1.5GHz. For optimum performance at higher frequency
from 1.4GHz to 3GHz, the MGA-632P8 is recommend-
ed. Both MGA-631P8 and MGA-632P8 share the same
package and pinout.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm3 8-lead TSLP
Features
• Low noise figure
• Good input return loss
• High linearity performance
• High Isolation
• Externally adjustable supply current, 40-80mA
• Externally adjustable gain, 15-20dB
• GaAs E-pHEMT Technology[1]
• Low cost small package size: 2.0x2.0x0.75 mm3
• Excellent uniformity in product specifications
Specifications
900MHz; 4V, 60mA (typ)
• 17.5 dB Gain
• 0.53 dB Noise Figure
• -19.4dB S11
• -34dB S12
• 33.1 dBm Output IP3
• 18.0 dBm Output Power at 1dB gain compression
Applications
• Low noise amplifier for cellular infrastructure for GSM,
CDMA, GPS and ISM.
• Other ultra low noise applications.
Note:
[1] Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Top View
Note:
Package marking provides
orientation and identification
“G1” is Device Code
“X” is month code
Bottom View
Note:
Pin 1 : not used Pin 5 : FB1
Pin 2 : RFin
Pin 6 : not used
Pin 3 : RF ground Pin 7 : RFout
Pin 4 : Vbias
Pin 8 : Gnd
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and
Control.
1 Page Electrical Specifications[3][4]
TA = 25 °C, Vd =4V @ 60mA, R1=91ohm unless otherwise specified.
Symbol
Vbias
Gain
OIP3
NF50Ω
OP1dB
IRL
ORL
S12
Parameter and Test Condition
Operational Gate Voltage, Ids=60mA
Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Associated Gain
Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Output Third Order Intercept Point
(2-tone @ FRF +/- 5MHz, Pin = -20dBm)
Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Noise Figure in 50Ω system
Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Output Power at 1dB Gain Compression
Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Input Return Loss
Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Output Return Loss
Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Reverse Isolation
Units Min.
Typ.
Max.
1.7 2.2 2.7
dB 18.4
17.9
16.0 17.5 19.0
dBm 34.2
33.8
33.1
dB 0.57
0.51
0.53 1.0
dBm 18.3
18.0
18.0
dB -20.9
-30.6
-19.4
dB -21.3
-22.1
-22.5
dB -34.0
-34.0
-34.0
Notes:
[3] Measurements obtained using demo board described in Figure 28 and Table 1, List 1. Input and output board losses have been de-embedded.
[4] Guaranteed specifications are 100% tested in production test circuit.
3Pages MGA-631P8 Typical Performance for 450 Mz Matching [6]
TA = +25 °C, Vd = 4V, Id = 60mA
26 1.6
Gain
24 NF 1.4
22 1.2
20 1.0
18 0.8
16 0.6
14 0.4
12 0.2
10 0.0
0.35 0.38 0.40 0.43 0.45 0.48 0.50 0.53 0.55
Frequency (GHz)
35
30
25
20
15
10
5
0
0.4
0.425
0.45
Frequency (GHz)
0.475
Figure 22. Gain and NF Vs Frequency
Figure 23. OIP3 vs Frequency
OIP3
0.5
00
-5 -3
-10 -6
-15 -9
-20
Input Return Loss
Output Return Loss
-12
-25 -15
-30 -18
-35 -21
-40 -24
-45 -27
0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65
Frequency (GHz)
Figure 24. Input and output Return Loss vs
Frequency
MGA-631P8 Typical Performance for 1.5 GHz Matching [7]
TA = +25 °C, Vd = 4V, Id = 60mA
18 1.6 45
17
Gain
NF
1.4
40
00
Input Return Loss
-5 Output Return Loss -2
16 1.2
35 -10 -4
15 1
30
OIP3
-15
-6
14 0.8
25
13 0.6
-20 -8
12 0.4 20
-25 -10
11 0.2 15
-30 -12
10
1.3
1.4 1.5
Frequency (GHz)
1.6
0 10
1.7 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70
Frequency (GHz)
-35 -14
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
Frequency (GHz)
Figure 25. Gain and NF vs Frequency
Figure 26. OIP3 vs Frequency
Figure 27. Input and output Return Loss vs
Frequency
Notes:
[6] For Figure 22, 23 and 24, measurements obtained using demo board described in Figure28 and Table 1, List 2.
[7] For Figure 25, 26 and 27, measurements obtained using demo board described in Figure28 and Table 1, List 3.
6 Page | |||
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部品番号 | 部品説明 | メーカ |
MGA-631P8 | Active Bias Low Noise Amplifier | AVAGO |