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MGA-14516 の電気的特性と機能

MGA-14516のメーカーはAvago Technologiesです、この部品の機能は「High Linearity Active Bias Low Noise Amplifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 MGA-14516
部品説明 High Linearity Active Bias Low Noise Amplifier
メーカ Avago Technologies
ロゴ Avago Technologies ロゴ 




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MGA-14516 Datasheet, MGA-14516 PDF,ピン配置, 機能
MGA-14516
High Gain, High Linearity Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-14516 is a two stage, easy-to-
use GaAs MMIC Low Noise Amplifier (LNA) with active
bias. The LNA has low noise with good input return loss
and high linearity achieved through the use of Avago
Technologies’ proprietary 0.5um and 0.25um GaAs En-
hancement-mode pHEMT process. Both LNAs have an
extra feature inside that allows a designer to adjust supply
current. The first stage has an additional feature where the
gain can be adjusted externally without affecting noise
figure. Minimum matching needed for input, output and
the inter-stage between the two LNA.
It is designed for optimum use between 1.4GHz to 2.7GHz.
For optimum performance at lower frequency from
400MHz to 1.5GHz, the MGA-13516 is recommended.
Both MGA-13516 & MGA-14516 share the same package
and pinout.
Pin Configuration and Package Marking
4.0 x 4.0 x 0.85 mm3 16-lead QFN
Pin 12
Pin 11
Pin 10
Pin 9
14516
YYWW
XXXX
Pin 12
Pin 1Pin 11
Pin 2Pin 10
Pin 3Pin 9
Pin 4
Pin 1
Pin 2
Pin 3
Pin 4
Features
Low noise figure
High gain
Good IRL
High linearity performance
High reverse isolation
Externally adjustable supply current
Externally adjustable gain
GaAs E-pHEMT Technology [1]
Low cost QFN package
Excellent uniformity in product specifications
Specifications
 1.95GHz ; Q1 : 5V, 45mA (typ) Q2 : 5V, 110mA
31.7 dB Gain
0.68 dB Noise Figure
13 dB IRL
38 dBm Output IP3
23.5 dBm Output Power at 1dB gain compression
Applications
Low noise amplifier for cellular infrastructure including
GSM, CDMA, W-CDMA, TD-SCDMA and WiMAX.
Other very low noise applications.
W
TOP VIEW
BOTTOM VIEW
BOTTOM VIEW
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Pin Description Pin Description
[1]
[12]
[1]1
[2]2
Not Used
Gnd
9 N[1o2t]Used
10 R[1F1o]ut
[2]
[11] [3]3 RFin
11 R[1F0o]ut
Attention: Observe precautions for
handling electrostatic sensitive devices.
[3]
[10] [4]4 RFgnd1
12 N[9o]t Used
[4] [9] 5 Vbias1 13 Vg
6 FB1
14 RFgnd2
ESD Machine Model = 40 V
ESD Human Body Model = 200 V
Refer to Avago Application Note
7 RFout1
15 Vm
A004R: Electrostatic Discharge,
8 RFin2
16 Vbias
Damage and Control.
Notes:
Package marking provides orientation and identification “14516” is the
Product Identification, “YYWW” is the Date Code, “XXXX” is the last 4
digits of the lot number.

1 Page





MGA-14516 pdf, ピン配列
Demo Board Layout
IN OUT
MAR2007
OMBAK#MBD2
Figure 5. Demo Board Layout
AVAGO
Technologies
Vbias=5V
C16
C6
L3
Notes:
Recommended PCB material is 10 mils Rogers RO4350.
Suggested component values may vary according to layout and PCB
material.
L1 and C1 form the input matching network.
L4 and C7 form the output matching network.
L2, L3, C5 form the inter-stage matching network.
R2 and C4 form the network for externally gain adjustment feature.
(optional)
R4 and C18 form the network for externally gain adjustment feature.
(optional)
Cs, C6, C13 are RF bypass capacitor.
C16 mitigates the effect of external noise pickup on the Vbias line.
R1 is bias resistor for Q1.
Vdd2=5V
C11
R4 C13
[1]
[2]
C1 [3]
L1 [4]
[12] C18
[11]
[10]
[9]
L4
C7
Cs
R1
Figure 6. Demo Board Schematic

L2
C10
C9
Vdd1=5V


3Pages


MGA-14516 電子部品, 半導体
MGA-14516 Typical Performance
TA = 25°C, Vdd1=5V, Vdd2=5V, Vbias=5V unless stated otherwise. Measured on demo board in Figure 5 with compo-
nents listed in Table 1.
45 25
40 24
23
35 22
30 -40°C 21
25
-30°C
25°C
20
85°C 19
-40°C
-30°C
25°C
85°C
20
1.65 1.75 1.85 1.95 2.05 2.15
Frequency (GHz)
18
1.65 1.75 1.85 1.95 2.05 2.15
Frequency (GHz)
Figure 12. OIP3 vs. Frequency and Temperature
Figure 13. OP1dB vs. Frequency and Temperature
30
25
20
15
10
5
0
0246
Frequency (GHz)
Figure 14. IRL & ORL vs. Frequency
IRL
ORL
8 10
40
20
0
-20
-40
-60
-80
0246
Frequency (GHz)
Figure 15. Gain & S12 vs. Frequency
Gain
S12
8 10
36
34
32
30
28
26
24
22
1.7
1.9 2.1 2.3
Frequenc y (GHz )
Gain
NF
2.5
2
1.8
1.6
1.4
1.2
1
0.8
0.6
2.7
Figure 16. Gain and NF vs. Frequency
42
40
38
36
34
32
30
1.7
1.9 2.1 2.3
Frequency (GHz)
Figure 17. OIP3 and OP1dB vs. Frequency
25
24
23
22
OIP3
OP1dB
21
20
19
2.5 2.7


6 Page



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部品番号部品説明メーカ
MGA-14516

High Linearity Active Bias Low Noise Amplifier

Avago Technologies
Avago Technologies


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