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HM62832HLJP の電気的特性と機能

HM62832HLJPのメーカーはHitachiです、この部品の機能は「32768-word x 8-bit High Speed CMOS Static RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 HM62832HLJP
部品説明 32768-word x 8-bit High Speed CMOS Static RAM
メーカ Hitachi
ロゴ Hitachi ロゴ 




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HM62832HLJP Datasheet, HM62832HLJP PDF,ピン配置, 機能
HM62832H Series
32768-word × 8-bit High Speed CMOS Static RAM
Features
High speed: Fast access time 25/35/45 ns (max)
Low power
Active: 300 mW (typ)
Standby: 10 µW (typ) (L-version)
Single 5 V supply
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Common data input and output – Three state output
Directly TTL compatible – All inputs and outputs
Ordering Information
Type No.
Access Time
HM62832HP-25
HM62832HP-35
HM62832HP-45
25 ns
35 ns
45 ns
HM62832HLP-25
HM62832HLP-35
HM62832HLP-45
25 ns
35 ns
45 ns
HM62832HJP-25
HM62832HJP-35
HM62832HJP-45
25 ns
35 ns
45 ns
HM62832HLJP-25 25 ns
HM62832HLJP-35 35 ns
HM62832HLJP-45 45 ns
Package
300-mil 28-pin plastic DIP (DP-28NA)
300-mil 28-pin plastic SOJ (CP-28DN)

1 Page





HM62832HLJP pdf, ピン配列
Block Diagram
A13
A14
A12
A7
A6
X
address
A5 buffer
A4
A3
Row
decoder
HM62832H Series
Memory array
512 × 512
VCC
VSS
I/O 0
I/O 7
WE
OE
CS
I/O
buffer
Column I/O
Column decoder
Y address buffer
A2 A1 A0 A10 A11 A9 A8
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Note: 1. –2.5 V for pulse width 10 ns
Symbol
VT
PT
Topr
Tstg
Tbias
Value
–0.5 *1 to +7.0
1.0
0 to +70
–55 to +125
–10 to +85
Unit
V
W
°C
°C
°C
Function Table
CS OE
HX
LL
LH
LL
Note: X: H or L
WE
X
H
L
L
Mode
Not selected
Read
Write
VCC Current
ISB, ISB1
I CC
I CC
I CC
I/O Pin
High-Z
Dout
Din
Din
Ref. Cycle
Read cycle (1) to (3)
Write cycle (1)
Write cycle (2)
3


3Pages


HM62832HLJP 電子部品, 半導体
HM62832H Series
Write Cycle
HM62832H-25 HM62832H-35 HM62832H-45
Parameter
Symbol Min Max Min Max Min Max Unit Notes
Write cycle time
tWC 25 — 35 — 45 — ns
Chip selection to end of write
tCW 15 — 20 — 25 — ns
Address valid to end of write
tAW 20 — 30 — 40 — ns
Address setup time
tAS 0 — 0 — 0 — ns
Write pulse width
tWP 15 — 20 — 25 — ns 3
Write recovery time
tWR 0
—0
—0
— ns 4
Write to output in high-Z
t WHZ
0
12 0
15 0
20 ns 2, 5
Data to write time overlap
tDW 12 — 15 — 20 — ns
Data hold from write time
tDH 0
—0
—0
— ns
Output disable to output in high-Z tOHZ
0
12 0
15 0
20 ns 2, 5
Output active from end of write
t OW
5
—5
—5
— ns 2, 7
Notes: 1. Transition is measured ±200 mV from steady state voltage with load (B). This parameter is
sampled and not 100% tested.
2. Transition is measured ±200 mV from high impedance voltage with load (B). This parameter is
sampled and not 100% tested.
3. A write occurs during the overlap (tWP) of a low CS and a low WE.
4. tWR is measured from the ealier of CS or WE going high to the end of write cycle.
5. During this period, I/O pins are in the output state. The input signals out of phase must not be
applied.
6. Dout is in the same phase of written data of this write cycle.
7. If CS is low during this period, I/O pins are in the output state. The input signals out of phase must
not be applied to I/O pins.
6

6 Page



ページ 合計 : 17 ページ
 
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部品番号部品説明メーカ
HM62832HLJP

32768-word x 8-bit High Speed CMOS Static RAM

Hitachi
Hitachi


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