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PDF IXGH17N100A Data sheet ( Hoja de datos )

Número de pieza IXGH17N100A
Descripción High speed IGBT
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXGH17N100A Hoja de datos, Descripción, Manual

Low V IGBT
CE(sat)
High speed IGBT
VCES
IXGH/IXGM 17 N100 1000 V
IXGH/IXGM 17 N100A 1000 V
IC25
34 A
34 A
VCE(sat)
3.5 V
4.0 V
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 82
Clamped inductive load, L = 300 µH
PC
TJ
TJM
Tstg
Md
Weight
TC = 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
1000
1000
V
V
±20 V
±30 V
34 A
17 A
68 A
ICM = 34
@ 0.8 V
CES
150
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
BVCES
V
GE(th)
I
CES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 3 mA, VGE = 0 V
I
C
=
250
µA,
V
CE
=
V
GE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
T
J
=
25°C
TJ = 125°C
17N100
17N100A
1000
2.5
V
5V
250 µA
1 mA
±100 nA
3.5 V
4.0 V
TO-247 AD (IXGH)
G
CE
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
l International standard packages
l 2nd generation HDMOSTM process
l Low V
CE(sat)
- for low on-state conduction losses
l High current handling capability
l MOS Gate turn-on
- drive simplicity
l Voltage rating guaranteed at high
temperature (125°C)
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l High power density
© 1996 IXYS All rights reserved
91515E (3/96)

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