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H30R100 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H30R100
部品説明 Reverse Conducting IGBT
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 



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H30R100 Datasheet, H30R100 PDF,ピン配置, 機能
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
1.5V Forward voltage of monolithic body Diode
Full Current Rating of monolithic body Diode
Specified for TJmax = 175°C
Trench and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Applications:
Microwave Oven
Soft Switching Applications
IHW30N100R
q
C
G
E
PG-TO-247-3
Type
VCE
IHW30N100R 1000V
IC
30A
VCE(sat),Tj=25°C
1.5V
Tj,max Marking
175°C H30R100
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 1000V, Tj 175°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1000
60
30
90
90
60
30
90
±20
±25
412
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.2 Nov 08

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Reverse Conducting IGBT

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