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PDF TC4404 Data sheet ( Hoja de datos )
| Número de pieza | TC4404 | |
| Descripción | 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS | |
| Fabricantes | TelCom | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TC4404 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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1
TC4404
TC4405
1.5A DUAL OPEN-DRAIN MOSFET DRIVERS
FEATURES
s Independently-Programmable Rise and Fall Times
s Low Output Impedance ................................ 7Ω Typ
s High Speed tR, tF ....... <30 nsec with 1000 pF Load
s Short Delay Times .................................... < 30 nsec
s Wide Operating Range .......................... 4.5V to 18V
s Latch-Up Protected ......... Will Withstand >500 mA
Reverse Current (Either Polarity)
s Input Withstands Negative Swings Up to –5V
APPLICATIONS
s Motor Controls
s Driving Bipolar Transistors
s Driver for Nonoverlapping Totem Poles
s Reach-Up/Reach-Down Driver
ORDERING INFORMATION
Part No.
Package
TC4404COA
TC4404CPA
TC4404EOA
TC4404EPA
TC4404MJA
TC4405COA
TC4405CPA
TC4405EOA
TC4405EPA
TC4405MJA
8-Pin SOIC
8-Pin PDIP
8-Pin SOIC
8-Pin PDIP
8-Pin CerDIP
8-Pin SOIC
8-Pin PDIP
8-Pin SOIC
8-Pin PDIP
8-Pin CerDIP
Temperature
Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
The TC4404 and TC4405 are CMOS buffer-drivers
constructed with complementary MOS outputs, where the
drains of the totem-pole output have been left separated so
that individual connections can be made to the pull-up and
pull-down sections of the output. This allows the insertion
of drain-current-limiting resistors in the pull-up and/or pull-
down sections, allowing the user to define the rates of rise
and fall for a capacitive load; or a reduced output swing, if
driving a resistive load, or to limit base current, when
driving a bipolar transistor. Minimum rise and fall times,
with no resistors, will be less than 30 nsec for a 1000-pF
load. There is no upper limit.
For driving MOSFETs in motor-control applications,
where slow-ON/fast-OFF operation is desired, these de-
vices are superior to the previously-used technique of add-
ing a diode-resistor combination between the driver output
and the MOSFET, because they allow accurate control of
turn-ON, while maintaining fast turn-OFF and maximum
noise immunity for an OFF device.
When used to drive bipolar transistors, these drivers
maintain the high speeds common to other TelCom driv-
ers. They allow insertion of a base current-limiting resistor,
while providing a separate half-output for fast turn-OFF. By
proper positioning of the resistor, either npn or pnp transis-
tors can be driven.
For driving many loads in low-power regimes, these
drivers, because they eliminate shoot-through currents in
the output stage, require significantly less power at higher
frequencies, and can be helpful in meeting low-power
budgets.
Because neither drain in an output is dependent on
the other, these devices can also be used as open-drain
buffer/drivers where both drains are available in one device,
1 VDD
2
3
4
5
6
2 (3)
INPUT
4.7V
300 mV
TC4404
INVERTING
TC4405
NONINVERTING
8 (6)
PULL UP
7 (5)
PULL DOWN
7
GND
4
EFFECTIVE
INPUT
C 12 pF
TELCOM SEMICONDUCTOR, INC.
A (B)
8
TC4404/5-6 10/21/96
4-219
1 page  
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
1
TC4404
TC4405
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
100
2200 pF
TA = +25°C
80 1500 pF
Fall Time vs. Supply Voltage
100
2200 pF
TA = +25°C
80 1500 pF
Rise TIme vs. Capacitive Load
100
TA = +25°C
VDD = 5V
80
2
60
1000 pF
40
470 pF
20
100 pF
60
1000 pF
40
470 pF
20
100 pF
60 10V
315V
40
20
0
4 6 8 10 12 14 16 18
VDD
0
4 6 8 10 12 14 16 18
VDD
Fall Time vs. Capacitive Load
100
TA = +25°C
80
VDD = 5V
Rise and Fall Times
vs. Temperature
60
CLOAD = 1000 pF
50 VDD = 17.5V
60 10V 40
15V
40 30
t FALL
20
0
100
1000
CLOAD (pF)
10,000
20
t RISE
10
–55 –35 –15 5 25 45 65 85 105 125
TEMPERATURE (°C)
Effect of Input Amplitude
on Delay Time
60
CLOAD = 1000 pF
50 VDD = 10V
TA= +25°C
40
Propagation Delay Time
vs. Temperature
60
50
VDD = 17.5V
VLOAD = 1000 pF
40
tD2
30
tD2
30
20
10
0
100
1000
CLOAD (pF)
10,000
Propagation Delay
vs. Supply Voltage
60
CLOAD = 1000 pF
50 TA = +25°C
t D2
40
30
t D1
20
10
4 6 8 10 12 14 16 18
VDD
Quiescent Supply Current
vs. Voltage
10
TA = +25°C
BOTH INPUTS = 1
1
4
5
6
7
20 tD1
tD1 BOTH INPUTS = 0
10 0.1
0 2 4 6 8 10 –55 –35 –15 5 25 45 65 85 105 125
4 6 8 10 12 14 16 18
8VDRIVE (V)
TEMPERATURE (°C)
VDD
TELCOM SEMICONDUCTOR, INC.
4-223
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TC4404.PDF ] | |
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