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6R600P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 6R600P
部品説明 Power Transistor
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 

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6R600P Datasheet, 6R600P PDF,ピン配置, 機能
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max @ Tj =25°C
Q g,typ
IPB60R600CP
650 V
0.6
21 nC
PG-TO263
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Type
IPB60R600CP
Package
PG-TO263
Marking
6R600P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=2.2 A, V DD=50 V
I D=2.2 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Rev.2.0
page 1
Value
6.1
3.8
15
144
0.2
2.2
50
±20
±30
60
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-02-15

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