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PDF SW1N60C Data sheet ( Hoja de datos )
| Número de pieza | SW1N60C | |
| Descripción | N-channel D-PAK/I-PAK/TO-92 MOSFET | |
| Fabricantes | SAMWIN | |
| Logotipo |  |
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SAMWIN
SW1N60C
N-channel D-PAK/I-PAK/TO-92 MOSFET
Features
TO-251
TO-252
TO-92
■ High ruggedness
■ RDS(ON) (Max 9 Ω)@VGS=10V
■ Gate Charge (Typical 5.6nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12
3
12
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at AC adaptors and SMPS.
BVDSS : 600V
ID : 1.0A
RDS(ON) : 9.0ohm
2
1
3
Order Codes
Item
1
2
3
Sales Type
SW C 1N60C
SW I 1N60C
SW D 1N60C
Marking
SW1N60C
SW1N60C
SW1N60C
Package
TO-92
TO-251
TO-252
Packaging
TAPE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
PD Total power dissipation (@TC=25oC)
Derating Factor above 25oC
TSTG, TJ Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
TL purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
RthjC
RthjL
RthjA
Thermal resistance, Junction to case
Thermal resistance, Junction to Lead Max
Thermal resistance, Junction to ambient
TO-92
0.8
0.5
2.0
TO-92
4.5
0.036
300
Value
TO-251
TO-252
600
1.0*
0.65*
4.0
±30
40
2.5
4.5
TO-251 TO-252
50
0.4
-55 ~ + 150
275
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
TO-92
-
27.7
150
Value
TO-251 TO-252
2.5
-
120
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0
1/5
1 page  
SAMWIN
Fig. 11. Unclamped Inductive switching test circuit & waveform
SW1N60C
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SW1N60C.PDF ] | |
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