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IRGP4760-EPbF の電気的特性と機能

IRGP4760-EPbFのメーカーはInternational Rectifierです、この部品の機能は「Insulated Gate Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP4760-EPbF
部品説明 Insulated Gate Bipolar Transistor
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGP4760-EPbF Datasheet, IRGP4760-EPbF PDF,ピン配置, 機能
 
VCES = 650V
IC = 60A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Lead-Free, RoHs compliant
C 
 
IRGP4760PbF
IRGP4760-EPbF
Insulated Gate Bipolar Transistor
G
E
n-channel
G
Gate
E
GC
IRGP4760PbF 
TO247AC 
C
Collector
E
GC
IRGP4760EPbF 
TO247AD 
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP4760PbF
IRGP4760-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4760PbF
IRGP4760-EPbF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
90
60
144
192
±20
325
160
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A 
V
W
C
Thermal Resistance
Parameter
RJC
RCS
RJA
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.46
–––
–––
Units
°C/W
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August 22, 2014

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IRGP4760-EPbF pdf, ピン配列
  IRGP4760PbF/IRGP4760-EPbF
100
For both:
90 Duty cycle : 50%
Tj = 175°C
80 Tcase = 100°C
Gate drive as specified
70 Power Dissipation = 163W
60 Square Wave:
50 VCC
40 I
30
Diode as specified
20
10
0.1
100
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
350
100
300
80
250
60 200
40
20
0
25 50 75 100 125 150 175
TC (°C)
150
100
50
0
25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3 - Power Dissipation vs.
Case Temperature
1000
100
10µsec
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100
VCE (V)
1msec
DC
1000 10000
Fig. 4 - Forward SOA
TC = 25°C; TJ 175°C; VGE = 15V
3 www.irf.com © 2014 International Rectifier
100
10
1
10
100
VCE (V)
1000
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Submit Datasheet Feedback
August 22, 2014


3Pages


IRGP4760-EPbF 電子部品, 半導体
 
10000
1000
Cies
100
Coes
Cres
10
0
100 200 300 400 500
VCE (V)
Fig. 18 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
IRGP4760PbF/IRGP4760-EPbF
16
14 VCES = 400V
12 VCES = 300V
10
8
6
4
2
0
0 20 40 60 80 100
Q G, Total Gate Charge (nC)
Fig. 19 - Typical Gate Charge vs. VGE
ICE = 48A
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
J J
1 1
R1R1
Ci= iRi
Ci= iRi
R2R2
2 2
R3R3 Ri (°C/W)
CC0.131857
33 0.190293
0.137850
i (sec)
0.000301
0.003726
0.021183
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case
1
6 www.irf.com © 2014 International Rectifier
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August 22, 2014

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部品番号部品説明メーカ
IRGP4760-EPbF

Insulated Gate Bipolar Transistor

International Rectifier
International Rectifier


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