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IRGP4760-EPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRGP4760-EPbF
部品説明 Insulated Gate Bipolar Transistor
メーカ International Rectifier
ロゴ International Rectifier ロゴ 

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IRGP4760-EPbF Datasheet, IRGP4760-EPbF PDF,ピン配置, 機能
 
VCES = 650V
IC = 60A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Lead-Free, RoHs compliant
C 
 
IRGP4760PbF
IRGP4760-EPbF
Insulated Gate Bipolar Transistor
G
E
n-channel
G
Gate
E
GC
IRGP4760PbF 
TO247AC 
C
Collector
E
GC
IRGP4760EPbF 
TO247AD 
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP4760PbF
IRGP4760-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4760PbF
IRGP4760-EPbF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
90
60
144
192
±20
325
160
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A 
V
W
C
Thermal Resistance
Parameter
RJC
RCS
RJA
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.46
–––
–––
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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August 22, 2014

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