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PDF MBR3040PTG Data sheet ( Hoja de datos )
| Número de pieza | MBR3040PTG | |
| Descripción | (MBR3040PTG - MBR30200PTG) 30.0 AMPS. Schottky Barrier Rectifiers | |
| Fabricantes | American First Semiconductor | |
| Logotipo |  |
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CREAT BY ART MBR3040PTG THRU MBR30200PTG
30.0 AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
Metal silicon junction, majority carrier conduction
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
High surge capability
Low power loss, high efficiency
High current capability, low forward voltage drop
For use in low voltage - high frequency inventers,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds/.17", (4.3mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
1
2
3
1
3
2
Mechanical Data
Case: JEDEC TO-3P/TO-247AD molded plastic
Polarity: As marked
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Mounting position:Any
Weight: 6.12 grams
Mounting torque: 10 in- lbs, max
MARKING DIAGRAM
YAWW
MBR30XXPT
Y = Year
A = Assembly Location
WW = Work Week
MBR30XXPT = Specific Device Code
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz) at Tc=105℃
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
IF=15A, TA=25℃
IF=15A, TA=125℃
IF=30A, TA=25℃
IF=30A, TA=125℃
Maximum Reverse Current @ Rated VR
Voltage Rate of Change,(Rated VR)
Typical Junction Capacitance
Maximum Thermal Resistance Per Leg
Operating Temperature Range
TA=25 ℃
TA=125 ℃
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Symbol
VRRM
VRMS
VDC
IF(AV)
MBR
3040
PTG
40
28
40
MBR
3045
PTG
45
31
45
MBR
3050
PTG
50
35
50
MBR
3060
PTG
60
MBR
3080
PTG
80
42 56
60 80
30
MBR MBR MBR
30100 30150 30200
PTG PTG PTG
100 150 200
70 105 140
100 150 200
IFRM
30
Unit
V
V
V
A
A
IFSM
IRRM
2
200
1
A
A
VF
IR
dV/dt
Cj
RθjC
TJ
TSTG
-
0.75
0.85
0.95 1.05
0.60
0.65
0.75
0.92 -
V
0.82
-
- 1.02 1.10
0.73
-
- 0.98 -
1
20 15
0.5
10
0.1 mA
10000
V/us
600 460
320 pF
1.4 OC/W
- 65 to + 150
OC
- 65 to + 175
OC
@ 2010 Copyright By American First Semiconductor
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBR3040PTG.PDF ] | |
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